Bezahlverfahren
IXBX75N170 +BOM
High Voltage Disc Igbt Bimosfet To-247Ad/Tube by Littelfuse IXBX75N170
PLUS247-
Hersteller:
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Herstellerteil #:
IXBX75N170
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Datenblatt:
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Series:
BIMOSFET™
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Voltage - Collector Emitter Breakdown (Max):
1700 V
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Current - Collector (Ic) (Max):
200 A
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Current - Collector Pulsed (Icm):
580 A
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for IXBX75N170, guaranteed quotes back within 12hr.
Verfügbarkeit: 5404 Stck
Bitte füllen Sie das kurze Formular unten aus und wir werden Ihnen umgehend ein Angebot zukommen lassen..
IXBX75N170 Allgemeine Beschreibung
- Designed for simplicity and reliability, the IXBX75N170 incorporates internal control circuits for gate driving and protection, streamlining system integration and reducing the need for external components. Furthermore, its advanced thermal management system ensures consistent operation even under extreme temperatures, making it ideal for challenging environments
Hauptmerkmale
- High-speed switching performance
- Low thermal resistance
- Small footprint size
Anwendung
- Radar antenna arrays
- Capacitor bank assemblies
- X-ray diffraction devices
Spezifikationen
Category | Discrete Semiconductor ProductsTransistorsIGBTsSingle IGBTs | Series | BIMOSFET™ |
IGBT Type | - | Voltage - Collector Emitter Breakdown (Max) | 1700 V |
Current - Collector (Ic) (Max) | 200 A | Current - Collector Pulsed (Icm) | 580 A |
Vce(on) (Max) @ Vge, Ic | 3.1V @ 15V, 75A | Power - Max | 1040 W |
Switching Energy | - | Input Type | Standard |
Gate Charge | 350 nC | Td (on/off) @ 25°C | - |
Test Condition | - | Reverse Recovery Time (trr) | 1.5 µs |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
Base Product Number | IXBX75 |
Servicerichtlinien und andere
After-Sales- und Abwicklungsbezogen
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In Stock: 5.404
Minimum Order: 1
Menge. | Einzelpreis | Ext. Preis |
---|---|---|
1+ | - | - |
Die unten angegebenen Preise dienen nur als Referenz.
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