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Siehe Technische Spezifikationen

IXBH10N170 +BOM

IGBT 1700 V 20 A 140 W Through Hole TO-247AD

Hersteller:

IXYS
Herstellerteil #:

IXBH10N170
Datenblatt:

IXBH10N170 Datenblatt (PDF)
Technology:

Si
Mounting Style:

Through Hole
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

1.7 kV
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an IXBH10N170

IXBH10N170 Allgemeine Beschreibung

BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device.

Hauptmerkmale

High blocking voltage
High power density
High current handling capability
Low conduction losses
MOS gate turn on for drive simplicity
International standard and proprietary ISOPLUS
TM
packages
Benefits:
Eliminates multiple series-parallel lower voltage, lower current rated
devices
Simpler system design
Improved reliability
Reduced component count
Reduced system cost

Anwendung

Radar transmitter power supplies
Radar pulse modulators
Capacitor discharge circuits
High voltage power supplies
AC switches
HV circuit breakers
Pulser circuits
High voltage test equipment
Laser & X-ray generators

Spezifikationen

Product Category	IGBT Transistors	Technology	Si
Mounting Style	Through Hole	Configuration	Single
Collector- Emitter Voltage VCEO Max	1.7 kV	Collector-Emitter Saturation Voltage	3.8 V
Maximum Gate Emitter Voltage	- 20 V, 20 V	Continuous Collector Current at 25 C	20 A
Pd - Power Dissipation	140 W	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Series	IXBH10N170
Continuous Collector Current	16 A	Continuous Collector Current Ic Max	20 A
Height	21.46 mm	Length	16.26 mm
Product Type	IGBT Transistors	Factory Pack Quantity	30
Subcategory	IGBTs	Tradename	BIMOSFET
Width	5.3 mm	Unit Weight	0.229281 oz

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Zahlung

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Verpackung

AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..