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IXBH14N300HV +BOM

IGBT 3000 V 38 A 200 W Through Hole TO-247HV (IXBH)

IXBH14N300HV Allgemeine Beschreibung

BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device.

Littelfuse Inc Inventar

Hauptmerkmale

  • "Free" intrinsic body diode
  • High power density
  • High frequency operation
  • Low conduction losses
  • MOS gate turn on for drive simplicity
  • 4000V electrical isolation
  • Advantages:
  • Low gate drive requirements
  • Space savings (eliminates multiple series-parallel lower voltage, lower current rated devices)
  • Easy to mount

Anwendung

  • Switched-mode and resonant-mode power supplies
  • Uninterruptible Power Supplies (UPS)
  • Laser and X-ray generators
  • Capacitor discharge circuits
  • High voltage pulser circuits
  • High voltage test equipment
  • AC switches

Spezifikationen

feature-packaging feature-rad-hard
feature-pin-count 3 feature-cecc-qualified
feature-esd-protection feature-military No
feature-aec-qualified No feature-aec-qualified-number
feature-eccn-code feature-svhc Yes
feature-svhc-exceeds-threshold Yes

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