Bezahlverfahren
IXBN75N170A +BOM
IGBT Module Single 1700 V 75 A 625 W Chassis Mount SOT-227B
MODULE-
Hersteller:
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Herstellerteil #:
IXBN75N170A
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Datenblatt:
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Technology:
Si
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Mounting Style:
SMD/SMT
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Configuration:
Single
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Collector- Emitter Voltage VCEO Max:
1.7 kV
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EDA/CAD Modelle:
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Verfügbarkeit: 3748 Stck
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IXBN75N170A Allgemeine Beschreibung
The IXBN75N170A BiMOSFET exemplifies the innovative approach taken by modern semiconductor technology to address the demands of high voltage applications. By incorporating the best features of MOSFETs and IGBTs, BiMOSFETs have achieved a level of performance and versatility that is truly exceptional. These devices shine in parallel operation scenarios, thanks to their unique characteristics such as the positive voltage temperature coefficient of saturation voltage and forward voltage drop. The intrinsic body diode, a key feature of BiMOSFETs, acts as a vital protection mechanism during device turn-off, effectively diverting inductive load currents and preventing harmful voltage spikes. With a focus on non-epitaxial construction and cutting-edge fabrication processes, the IXBN75N170A represents a new standard in high voltage device technology
Hauptmerkmale
- Simplified circuit design
- Reduced complexity
- Increased efficiency
Anwendung
- Industrial power systems
- High voltage inverters
- Electrical discharge machines
Spezifikationen
Product Category: | IGBT Transistors | Technology: | Si |
Mounting Style: | SMD/SMT | Configuration: | Single |
Collector- Emitter Voltage VCEO Max: | 1.7 kV | Collector-Emitter Saturation Voltage: | 4.95 V |
Maximum Gate Emitter Voltage: | - 20 V, + 20 V | Continuous Collector Current at 25 C: | 75 A |
Pd - Power Dissipation: | 625 W | Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C | Series: | IXBN75N170 |
Packaging: | Tube | Continuous Collector Current: | 75 A |
Continuous Collector Current Ic Max: | 350 A | Gate-Emitter Leakage Current: | 100 nA |
Height: | 9.6 mm | Length: | 38.23 mm |
Operating Temperature Range: | - 55 C to + 150 C | Product Type: | IGBT Transistors |
Factory Pack Quantity: | 10 | Subcategory: | IGBTs |
Tradename: | BIMOSFET | Width: | 25.42 mm |
Unit Weight: | 1.058219 oz |
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Qualitätsgarantie
Wir versprechen, 365 Tage Qualitätssicherung für alle unsere Produkte zu bieten.
In Stock: 3.748
Minimum Order: 1
Menge. | Einzelpreis | Ext. Preis |
---|---|---|
1+ | $146,402 | $146,40 |
200+ | $58,415 | $11.683,00 |
500+ | $56,463 | $28.231,50 |
1000+ | $55,499 | $55.499,00 |
Die unten angegebenen Preise dienen nur als Referenz.
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