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IXBR42N170 +BOM

IGBT Transistors 57Amps 1700V

  • Hersteller:

    Littelfuse Inc

  • Herstellerteil #:

    IXBR42N170

  • Datenblatt:

    IXBR42N170 Datenblatt (PDF) pdf-icon

  • Series:

    BIMOSFET™

  • Voltage - Collector Emitter Breakdown (Max):

    1700 V

  • Current - Collector (Ic) (Max):

    57 A

  • Current - Collector Pulsed (Icm):

    300 A

IXBR42N170 Allgemeine Beschreibung

The BiMOSFET IXBR42N170 is a groundbreaking device that harnesses the best qualities of MOSFETs and IGBTs. Through innovative non-epitaxial construction and cutting-edge fabrication processes, these high voltage devices have set a new standard in performance and reliability. With a unique positive voltage temperature coefficient, the BiMOSFETs are designed for seamless parallel operation, allowing for greater flexibility and efficiency in various applications. The inclusion of a "free" intrinsic body diode not only enhances the device's protection capabilities but also mitigates the risk of voltage transients, ensuring a smooth and uninterrupted operation

Littelfuse Inc Inventar

Hauptmerkmale

  • High blocking voltage
  • High power density
  • High current handling capability
  • Low conduction losses
  • MOS gate turn on for drive simplicity
  • International standard and proprietary ISOPLUS
  • TM
  • packages
  • Benefits:
  • Eliminates multiple series-parallel lower voltage, lower current rated
  • devices
  • Simpler system design
  • Improved reliability
  • Reduced component count
  • Reduced system cost

Anwendung

  • Radar transmitter power supplies
  • Radar pulse modulators
  • Capacitor discharge circuits
  • High voltage power supplies
  • AC switches
  • HV circuit breakers
  • Pulser circuits
  • High voltage test equipment
  • Laser & X-ray generators

Spezifikationen

Category Discrete Semiconductor ProductsTransistorsIGBTsSingle IGBTs Series BIMOSFET™
IGBT Type - Voltage - Collector Emitter Breakdown (Max) 1700 V
Current - Collector (Ic) (Max) 57 A Current - Collector Pulsed (Icm) 300 A
Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 42A Power - Max 200 W
Switching Energy - Input Type Standard
Gate Charge 188 nC Td (on/off) @ 25°C -
Test Condition - Reverse Recovery Time (trr) 1.32 µs
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
Base Product Number IXBR42

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