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IXBT20N300HV +BOM

IGBT 3000 V 50 A 250 W Surface Mount TO-268AA

IXBT20N300HV Allgemeine Beschreibung

BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device.

Hauptmerkmale

  • "Free" intrinsic body diode
  • High power density
  • High frequency operation
  • Low conduction losses
  • MOS gate turn on for drive simplicity
  • 4000V electrical isolation
  • Advantages:
  • Low gate drive requirements
  • Space savings (eliminates multiple series-parallel lower voltage, lower current rated devices)
  • Easy to mount

Anwendung

  • Switched-mode and resonant-mode power supplies
  • Uninterruptible Power Supplies (UPS)
  • Laser and X-ray generators
  • Capacitor discharge circuits
  • High voltage pulser circuits
  • High voltage test equipment
  • AC switches

Spezifikationen

Series BIMOSFET™ IGBT Type -
Voltage - Collector Emitter Breakdown (Max) 3000 V Current - Collector (Ic) (Max) 50 A
Current - Collector Pulsed (Icm) 140 A Vce(on) (Max) @ Vge, Ic 3.2V @ 15V, 20A
Power - Max 250 W Switching Energy -
Input Type Standard Gate Charge 105 nC
Td (on/off) @ 25°C - Test Condition -
Reverse Recovery Time (trr) 1.35 µs Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Base Product Number IXBT20

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