Diese Website verwendet Cookies. Durch die Nutzung dieser Website stimmen Sie der Verwendung von Cookies zu. Weitere Informationen finden Sie in unseren Datenschutzrichtlinie.

Die Bilder dienen nur als Referenz,

Siehe Technische Spezifikationen

IXGH36N60B3 +BOM

IGBT Transistors GenX3 600V IGBTs

Hersteller:

IXYS
Herstellerteil #:

IXGH36N60B3
Datenblatt:

IXGH36N60B3 Datenblatt (PDF)
Technology:

Si
Mounting Style:

Through Hole
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

600 V
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an IXGH36N60B3

IXGH36N60B3 Allgemeine Beschreibung

GenX3™ IGBTs are PT (Punch Through) manufactured using our robust HDMOS IGBT process.300V GenX3™ IGBTs offer switching capabilities up to 150 kHz, with currents ranging from 42A to 120A. The combination of high switching speeds and low conduction losses offers power designers a new high value option for switching applications. These UIS rated devices are rugged and robust making them comparable to most rugged power MOSFETs.600V GenX3™ are optimized for high current applications requiring soft-switching frequencies upwards of 200 kHz and hard-switching frequencies of 40 kHz. These devices utilize our proven Punch-Through (PT) technology providing higher surge current capabilities, lower saturation voltage, and lower energy losses offering designers a new viable option for switching applications at the 600V range.1200V GenX3™ utilize our advanced Punch-Through (PT) technology to provide lower saturation voltages, lower switching losses, and higher surge current capabilities. This growing product line aimed at the high voltage power conversion market.To accommodate optimum part selection, designers have a choice in selecting between three sub-classes denoted A3, B3, and C3. These classifications offer greater system design flexibility and the opportunity for designers to reach the best compromise between critical requirements such as switching frequency, efficiency, and cost.

Hauptmerkmale

High current handling capability
International standard packages
Optimized for low conduction & switching losses
Ultra fast anti-parallel diode (optional)
Avalanche rated
Square RBSOA
Low cost alternative to MOSFETs in the 300V range
Drive simplicity with MOS Gate turn-on
High frequency IGBT

Anwendung

Power inverters
UPS
Motor drives
SMPS
PFC circuits
Battery chargers
Welding machines
Lamp ballast
In-rush current protection circuits
DC choppers
Induction heating
Solar system inverters
Power Factor Correction Circuit
Uninterrupted power supply
Switch Mode power supply
Motor controls (ACAC/DC Motors)
Capacitive discharge switch

Spezifikationen

Product Category	IGBT Transistors	Technology	Si
Mounting Style	Through Hole	Configuration	Single
Collector- Emitter Voltage VCEO Max	600 V	Collector-Emitter Saturation Voltage	1.8 V
Maximum Gate Emitter Voltage	- 20 V, 20 V	Continuous Collector Current at 25 C	92 A
Pd - Power Dissipation	250 W	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Series	IXGH36N60
Product Type	IGBT Transistors	Factory Pack Quantity	30
Subcategory	IGBTs	Unit Weight	0.225753 oz

Servicerichtlinien und andere

After-Sales- und Abwicklungsbezogen

Zahlung

Bezahlverfahren

TT/Überweisung

Paypal

Western Union

Geldgramm

Für alternative Zahlungskanäle kontaktieren Sie uns bitte unter:

[email protected]

Versand & Verpackung

Versandart

Fedex

UPS

DHL

NTN

Verpackung

AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..