Bezahlverfahren
IXYH55N120C4 +BOM
IGBT Transistors XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT TO247
TO-247-3-
Hersteller:
-
Herstellerteil #:
IXYH55N120C4
-
Datenblatt:
-
Technology:
Si
-
Mounting Style:
Through Hole
-
Configuration:
Single
-
Collector- Emitter Voltage VCEO Max:
1.2 kV
-
EDA/CAD Modelle:
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for IXYH55N120C4, guaranteed quotes back within 12hr.
Verfügbarkeit: 9805 Stck
Bitte füllen Sie das kurze Formular unten aus und wir werden Ihnen umgehend ein Angebot zukommen lassen..
IXYH55N120C4 Allgemeine Beschreibung
Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities.These IGBTs have breakdown voltage from 650V till 1200V, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses.
Hauptmerkmale
- Low Vcesat, low Eon/Eoff
- High surge current capability and short circuit capability
- Positive thermal coefficient of Vcesat
Anwendung
- Battery Chargers
- Lamp Ballast
- Motor Drives
- Power Inverters
- Welding Machines
- Advantages:
- Hard-switching capabilities
- High power densities
- Temperature stability of diode forward voltage VF
- Low gate drive requirements
Spezifikationen
Product Category | IGBT Transistors | Technology | Si |
Mounting Style | Through Hole | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 1.2 kV | Collector-Emitter Saturation Voltage | 2.5 V |
Maximum Gate Emitter Voltage | - 20 V, 20 V | Continuous Collector Current at 25 C | 140 A |
Pd - Power Dissipation | 650 W | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 175 C | Series | 1200V XPTTM Gen 10 |
Continuous Collector Current Ic Max | 240 A | Product Type | IGBT Transistors |
Factory Pack Quantity | 30 | Subcategory | IGBTs |
Tradename | XPT |
Servicerichtlinien und andere
After-Sales- und Abwicklungsbezogen
Für alternative Zahlungskanäle kontaktieren Sie uns bitte unter:
[email protected]Versandart
AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..
365-Tage-Produkt
Qualitätsgarantie
Wir versprechen, 365 Tage Qualitätssicherung für alle unsere Produkte zu bieten.
In Stock: 9.805
Minimum Order: 1
Menge. | Einzelpreis | Ext. Preis |
---|---|---|
1+ | - | - |
Die unten angegebenen Preise dienen nur als Referenz.
Empfohlene Produkte
Top Sellers
-
N0795YN180
IXYS
1008+ $64,028
-
MCC95-16io1B
IXYS Corporation
The Dual Thyristor Modules Portfolio offers various packages and breakdown voltages up to 2200V.
-
MCC310-16io1
IXYS Corporation
Compact and reliable unidirectional thyristor module
-
MDNA360UB2200PTED
IXYS Corporation
Bridge Rectifier Three Phase (Braking) Standard 1.7 kV Chassis Mount E2
-
MCC501-16IO2
IXYS
Thyristor Module, Dual Configuration, 503A, 1600V, Compatible with WC-501 Chassis