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IXYH90N65A5 +BOM

IGBT Transistors XPT thin-wafer technology, 5th generation (GenX5 ) Trench IGBT. Disc IGBT XPT-GenX5 TO247

IXYH90N65A5 Allgemeine Beschreibung

Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art 5th generation (GenX5™) Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities.These IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) and with 650V breakdown voltage, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses.

Hauptmerkmale

  • Low Vcesat, low Eon/Eoff,
  • Optimized for low switching frequencies
  • High surge current capability
  • Square Reverse Bias Safe Operating Areas (RBSOA)
  • Positive thermal coefficient of Vcesat

Anwendung

  • Battery Chargers
  • Lamp Ballast
  • Motor Drives
  • Power Inverters
  • Welding Machines
  • Advantages:
  • Hard-switching capabilities
  • High power densities
  • Low gate drive requirements
  • Ease of replacement and availability of isolation package

Spezifikationen

Product Category IGBT Transistors Technology Si
Mounting Style Through Hole Configuration Single
Collector- Emitter Voltage VCEO Max 650 V Collector-Emitter Saturation Voltage 1.35 V
Maximum Gate Emitter Voltage - 20 V, 20 V Continuous Collector Current at 25 C 220 A
Pd - Power Dissipation 650 W Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Continuous Collector Current Ic Max 90 A
Product Type IGBT Transistors Factory Pack Quantity 300
Subcategory IGBTs Tradename XPT

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