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Ultra-fast switching, high-performance power conversi
PLUS264™Hersteller:
Herstellerteil #:
IXYK110N120C4
Datenblatt:
Technology:
Si
Mounting Style:
Through Hole
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
1.2 kV
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The IXYK110N120C4 represents the pinnacle of power management technology. Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art Trench IGBT process, these devices offer exceptional performance and reliability. With features such as reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities, these IGBTs are well-equipped to meet the demands of a variety of applications. Their breakdown voltage range from 650V to 1200V makes them ideal for snubber-less hard-switching applications, offering a versatile solution for power management needs. Additionally, their positive collector-to-emitter voltage temperature coefficient and low gate charges further enhance their appeal, providing engineers with the flexibility and efficiency they need for their designs
Product Category | IGBT Transistors | Technology | Si |
Mounting Style | Through Hole | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 1.2 kV | Collector-Emitter Saturation Voltage | 2.4 V |
Maximum Gate Emitter Voltage | - 20 V, 20 V | Continuous Collector Current at 25 C | 310 A |
Pd - Power Dissipation | 1.36 kW | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 175 C | Series | 1200V XPTTM Gen 8 |
Continuous Collector Current Ic Max | 310 A | Product Type | IGBT Transistors |
Factory Pack Quantity | 25 | Subcategory | IGBTs |
Tradename | XPT |
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