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IXYN110N120A4 +BOM

Next-generation insulated gate bipolar transistor for demanding electrical systems needing precision control and low losse

Hersteller:

IXYS
Herstellerteil #:

IXYN110N120A4
Datenblatt:

IXYN110N120A4 Datenblatt (PDF)
Technology:

Si
Mounting Style:

Screw Mounts
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

1.2 kV
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an IXYN110N120A4

IXYN110N120A4 Allgemeine Beschreibung

Innovatively incorporating XPT™ thin-wafer technology and the 4th generation Trench IGBT process, the IXYN110N120A4 product stands out as a game-changer in the industry. With a high voltage capacity of up to 1200V, this device not only helps in reducing gate driver requirements but also minimizes conduction losses significantly. Its unique features include reduced thermal resistance, low losses, high current densities, and a remarkably low gate charge requirement, making it a top choice for designers looking to enhance performance efficiency. Additionally, the positive collector-to-emitter voltage temperature coefficient allows for the parallel use of multiple devices, providing flexibility and scalability in various applications

Hauptmerkmale

High-speed switching frequency
Low saturation current
Rugged construction for harsh environments

Anwendung

Gate driver requirements reduced
Isolation package available
Device replacement made simple

Spezifikationen

Product Category	IGBT Transistors	Technology	Si
Mounting Style	Screw Mounts	Configuration	Single
Collector- Emitter Voltage VCEO Max	1.2 kV	Collector-Emitter Saturation Voltage	1.8 V
Maximum Gate Emitter Voltage	- 20 V, 20 V	Continuous Collector Current at 25 C	275 A
Pd - Power Dissipation	830 W	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Series	Trench
Continuous Collector Current Ic Max	950 A	Gate-Emitter Leakage Current	25 uA
Product Type	IGBT Transistors	Factory Pack Quantity	10
Subcategory	IGBTs	Tradename	XPT

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Verpackung

AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..