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IXYN50N170CV1 +BOM

High power IGBTs suitable for various applications

Hersteller:

Littelfuse Inc
Herstellerteil #:

IXYN50N170CV1
Datenblatt:

IXYN50N170CV1 Datenblatt (PDF)
Technology:

Si
Mounting Style:

Screw Mounts
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

1.7 kV
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an IXYN50N170CV1

IXYN50N170CV1 Allgemeine Beschreibung

With a formidable maximum collector-emitter voltage of 1700V and a continuous collector current rating of 50A, the IXYN50N170CV1 is a force to be reckoned with in the realm of power electronic applications. This high-voltage, high-speed Insulated Gate Bipolar Transistor (IGBT) is meticulously designed to meet the demands of heavy-duty power loads, delivering unparalleled performance and reliability. Its optimization for high-frequency switching applications ensures efficient power conversion with minimal energy loss, thanks to its low saturation voltage and rapid switching speed. Whether it's inverters, motor control, or power supplies, the IXYN50N170CV1 stands out as the go-to solution for applications where high efficiency and unwavering dependability are paramount. Engineered with a rugged chip design and advanced packaging technology, this IGBT excels in thermal performance and long-term reliability, even in harsh environments and under high operating temperatures, ensuring consistent performance over extended periods

Spezifikationen

Product Category:	IGBT Transistors	Technology:	Si
Mounting Style:	Screw Mounts	Configuration:	Single
Collector- Emitter Voltage VCEO Max:	1.7 kV	Collector-Emitter Saturation Voltage:	3.7 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V	Continuous Collector Current at 25 C:	120 A
Pd - Power Dissipation:	880 W	Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C	Packaging:	Tube
Gate-Emitter Leakage Current:	100 nA	Product Type:	IGBT Transistors
Factory Pack Quantity:	10	Subcategory:	IGBTs
Unit Weight:	1.058219 oz

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