Bezahlverfahren
IXYT55N120A4HV +BOM
IGBT Transistors IGBT XPT GEN 4 1200V TO268HV
TO-268HV-3-
Hersteller:
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Herstellerteil #:
IXYT55N120A4HV
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Datenblatt:
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IGBT Type:
PT
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Voltage - Collector Emitter Breakdown (Max):
1200 V
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Current - Collector (Ic) (Max):
175 A
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Current - Collector Pulsed (Icm):
350 A
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EDA/CAD Modelle:
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Verfügbarkeit: 3391 Stck
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IXYT55N120A4HV Allgemeine Beschreibung
Utilizing XPT™ thin-wafer technology and 4th generation (GenX4™) Trench IGBT process, these up to 1200V devices helps to reduced gate driver requirements and conduction losses. It features reduced thermal resistance, low losses, high current densities and low gate charge requirement. A positive collector-to-emitter voltage temperature coefficient enables designers to use multiple devices in parallel.
Hauptmerkmale
- Low on-state voltages Vcesat
- Positive thermal coefficient of Vcesat
- International standard packages
Anwendung
- Battery chargers
- Lamp ballasts
- Power inverters
- Uninterruptible power supplies (UPS)
- Welding machines
- Advantages:
- Ideal for high power density and high inrush currents, low loss applications
- Hard-switching capable
- Easy paralleling of devices
- Reduced gate driver requirements
- Ease of replacement and availability of isolation package
Spezifikationen
Category | Discrete Semiconductor ProductsTransistorsIGBTsSingle IGBTs | Series | - |
IGBT Type | PT | Voltage - Collector Emitter Breakdown (Max) | 1200 V |
Current - Collector (Ic) (Max) | 175 A | Current - Collector Pulsed (Icm) | 350 A |
Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 55A | Power - Max | 650 W |
Switching Energy | 2.3mJ (on), 5.3mJ (off) | Input Type | Standard |
Gate Charge | 110 nC | Td (on/off) @ 25°C | 23ns/300ns |
Test Condition | 600V, 40A, 5Ohm, 15V | Reverse Recovery Time (trr) | 35 ns |
Operating Temperature | -55°C ~ 175°C (TJ) | Mounting Type | Surface Mount |
Base Product Number | IXYT55 | Pin Count | 3 |
Released Date | Jun 15, 2022 | Last Modified Date | Mar 7, 2023 4:10 PM UTC |
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In Stock: 3.391
Minimum Order: 1
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