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Siehe Technische Spezifikationen

IXYX25N250CV1HV +BOM

N-channel insulated gate bipolar transistor chip capable of handling 830000mW power

Hersteller:

Littelfuse Inc
Herstellerteil #:

IXYX25N250CV1HV
Datenblatt:

IXYX25N250CV1HV Datenblatt (PDF)
Series:

XPT™
Voltage - Collector Emitter Breakdown (Max):

2500 V
Current - Collector (Ic) (Max):

95 A
Current - Collector Pulsed (Icm):

235 A
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an IXYX25N250CV1HV

IXYX25N250CV1HV Allgemeine Beschreibung

The IXYX25N250CV1HV is a top-of-the-line high-voltage IGBT module, meticulously engineered to deliver outstanding performance in high-power applications. With its impressive voltage rating of 2500V and current rating of 25A, this module is perfectly suited for operations demanding high voltage and high current capabilities. Its compact and rugged design, coupled with low on-state voltage drop and fast switching speeds, ensures unparalleled efficiency and minimal power loss in power conversion systems. Additionally, the module is equipped with built-in temperature and overcurrent protection circuits, guaranteeing safe and reliable operation even in the most demanding environments

Spezifikationen

Category	Discrete Semiconductor ProductsTransistorsIGBTsSingle IGBTs	Series	XPT™
IGBT Type	-	Voltage - Collector Emitter Breakdown (Max)	2500 V
Current - Collector (Ic) (Max)	95 A	Current - Collector Pulsed (Icm)	235 A
Vce(on) (Max) @ Vge, Ic	4V @ 15V, 25A	Power - Max	937 W
Switching Energy	8.3mJ (on), 7.3mJ (off)	Input Type	Standard
Gate Charge	147 nC	Td (on/off) @ 25°C	15ns/230ns
Test Condition	1250V, 25A, 5Ohm, 15V	Reverse Recovery Time (trr)	220 ns
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Through Hole
Base Product Number	IXYX25	feature-packaging
feature-rad-hard		feature-pin-count	3
feature-cecc-qualified		feature-esd-protection
feature-military	No	feature-aec-qualified	No
feature-aec-qualified-number		feature-eccn-code
feature-svhc	Yes	feature-svhc-exceeds-threshold	Yes

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