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Siehe Technische Spezifikationen

NSS60600MZ4T1G +BOM

Low VCE(sat) Transistor, PNP, 60 V, 6.0 A

Hersteller:

ON Semiconductor, LLC
Herstellerteil #:

NSS60600MZ4T1G
Datenblatt:

NSS60600MZ4T1G Datenblatt (PDF)
Transistor Type:

PNP
Current - Collector (Ic) (Max):

6 A
Voltage - Collector Emitter Breakdown (Max):

60 V
Vce Saturation (Max) @ Ib, Ic:

350mV @ 600mA, 6A
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an NSS60600MZ4T1G

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

NSS60600MZ4T1G Allgemeine Beschreibung

TRANSISTOR, PNP, -60V, -6A, SOT-223-4; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -60V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 2W; DC Collector Current: -6A; DC Current Gain hFE: 150hFE; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018); Operating Temperature Min: -55°C

Hauptmerkmale

Fast Overload Recovery
Minimal Vibration Sensitivity
High Isolation Voltage

Anwendung

Dependable in automotive industry
Versatile for different systems
Efficient power management solution

Spezifikationen

Category	Discrete Semiconductor ProductsTransistorsBipolar (BJT)Single Bipolar Transistors	Series	-
Transistor Type	PNP	Current - Collector (Ic) (Max)	6 A
Voltage - Collector Emitter Breakdown (Max)	60 V	Vce Saturation (Max) @ Ib, Ic	350mV @ 600mA, 6A
Current - Collector Cutoff (Max)	100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1A, 2V
Power - Max	800 mW	Frequency - Transition	100MHz
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	NSS60600	Product Category	Bipolar Transistors - BJT
Mounting Style	SMD/SMT	Transistor Polarity	PNP
Configuration	Single	Collector- Emitter Voltage VCEO Max	60 V
Collector- Base Voltage VCBO	100 V	Emitter- Base Voltage VEBO	6 V
Collector-Emitter Saturation Voltage	350 mV	Maximum DC Collector Current	6 A
Pd - Power Dissipation	2 W	Gain Bandwidth Product fT	100 MHz
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
DC Collector/Base Gain hfe Min	150	Height	1.57 mm
Length	6.5 mm	Product Type	BJTs - Bipolar Transistors
Factory Pack Quantity	1000	Subcategory	Transistors
Technology	Si	Width	3.5 mm
Unit Weight	0.003951 oz

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Verpackung

AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..

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Bewertungen und Rezensionen

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v**n 12.22.2023

Order shipped and delivered quickly.The store is very satisfied.

P**a 06.24.2023

All perfectly regulators are good and at a low price. I recommend the seller. Good packing. Additional discount with each purchase on avaq. You can return up to 15% from purchases in your favorite online stores, click on the link-ali. pub \ 391nwv-register and save. Good shopping to everyone!!! :)

J**n 06.13.2023

Very fast delivery, item as described.

M**l 02.05.2023

Received/well packed