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Siehe Technische Spezifikationen

NSV60600MZ4T1G +BOM

PNP Transistor with Low VCE(sat) Rating of 60 V and 6.0 A

Hersteller:

ON Semiconductor, LLC
Herstellerteil #:

NSV60600MZ4T1G
Datenblatt:

NSV60600MZ4T1G Datenblatt (PDF)
Transistor Type:

PNP
Current - Collector (Ic) (Max):

6 A
Voltage - Collector Emitter Breakdown (Max):

60 V
Vce Saturation (Max) @ Ib, Ic:

350mV @ 600mA, 6A
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an NSV60600MZ4T1G

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

NSV60600MZ4T1G Allgemeine Beschreibung

Designed for high-speed switching applications where power saving is a top concern, the NSV60600MZ4T1G Bipolar Transistor offers exceptional performance and efficiency. Its low saturation voltage means that it can handle high currents without wasting excess energy, making it an excellent choice for applications that require fast response times and minimal power consumption. With its high gain, this transistor provides precise control over the output signal, ensuring reliable operation in a variety of circuit designs. Whether you are building a new prototype or upgrading an existing system, this transistor is sure to meet your needs for high-speed switching and power efficiency

Hauptmerkmale

Ultra-Fast Turn-On Time
Robust Overvoltage Protection
Superior Power Factor Correction
AECQ101 Qualified for Automotive Use

Anwendung

Efficient energy conversion
Stable voltage output
Compact power solution

Spezifikationen

Category	Discrete Semiconductor ProductsTransistorsBipolar (BJT)Single Bipolar Transistors	Series	-
Transistor Type	PNP	Current - Collector (Ic) (Max)	6 A
Voltage - Collector Emitter Breakdown (Max)	60 V	Vce Saturation (Max) @ Ib, Ic	350mV @ 600mA, 6A
Current - Collector Cutoff (Max)	100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1A, 2V
Power - Max	800 mW	Frequency - Transition	100MHz
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	NSV60600

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