Diese Website verwendet Cookies. Durch die Nutzung dieser Website stimmen Sie der Verwendung von Cookies zu. Weitere Informationen finden Sie in unseren Datenschutzrichtlinie.

Die Bilder dienen nur als Referenz,

Siehe Technische Spezifikationen

NSV60601MZ4T1G +BOM

Low VCE(sat) Transistor, NPN, 60 V, 6.0 A

Hersteller:

ON Semiconductor, LLC
Herstellerteil #:

NSV60601MZ4T1G
Datenblatt:

NSV60601MZ4T1G Datenblatt (PDF)
Transistor Type:

NPN
Current - Collector (Ic) (Max):

6 A
Voltage - Collector Emitter Breakdown (Max):

60 V
Vce Saturation (Max) @ Ib, Ic:

300mV @ 600mA, 6A
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an NSV60601MZ4T1G

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

NSV60601MZ4T1G Allgemeine Beschreibung

Elevate your RF amplification capabilities with the NSV60601MZ4T1G - a powerhouse transistor that excels in high-temperature environments. With its high output power, innovative design, and advanced GaN technology, this transistor is a versatile and reliable solution for a wide range of applications. From high-power transmitters to demanding industrial settings, the NSV60601MZ4T1G delivers exceptional performance and durability, making it the ultimate choice for your RF amplification needs

Hauptmerkmale

Improved Thermal Resistance
Sufficient Current Handling
Easy Integration
High Frequency Performance

Anwendung

Industrial use
Retail solutions
Healthcare tech
Smart structures
Secure systems
Energy control

Spezifikationen

Category	Discrete Semiconductor ProductsTransistorsBipolar (BJT)Single Bipolar Transistors	Series	-
Transistor Type	NPN	Current - Collector (Ic) (Max)	6 A
Voltage - Collector Emitter Breakdown (Max)	60 V	Vce Saturation (Max) @ Ib, Ic	300mV @ 600mA, 6A
Current - Collector Cutoff (Max)	100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1A, 2V
Power - Max	800 mW	Frequency - Transition	100MHz
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	NSV60601	Product Category	Bipolar Transistors - BJT
Mounting Style	SMD/SMT	Transistor Polarity	NPN
Configuration	Single	Collector- Emitter Voltage VCEO Max	60 V
Collector- Base Voltage VCBO	100 V	Emitter- Base Voltage VEBO	6 V
Collector-Emitter Saturation Voltage	300 mV	Maximum DC Collector Current	6 A
Pd - Power Dissipation	2 W	Gain Bandwidth Product fT	100 MHz
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Qualification	AEC-Q101	DC Collector/Base Gain hfe Min	120
DC Current Gain hFE Max	360 at 1 A, 2 V	Product Type	BJTs - Bipolar Transistors
Factory Pack Quantity	1000	Subcategory	Transistors
Technology	Si	Unit Weight	0.003951 oz

Servicerichtlinien und andere

After-Sales- und Abwicklungsbezogen

Zahlung

Bezahlverfahren

TT/Überweisung

Paypal

Western Union

Geldgramm

Für alternative Zahlungskanäle kontaktieren Sie uns bitte unter:

[email protected]

Versand & Verpackung

Versandart

Fedex

UPS

DHL

NTN

Verpackung

AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..

Garantie

365-Tage-Produkt

Qualitätsgarantie

Wir versprechen, 365 Tage Qualitätssicherung für alle unsere Produkte zu bieten.

Bewertungen und Rezensionen

Mehr

C**n 07.05.2023

Delivery to lithuania 20 days.

J**n 02.21.2022

Stitched serial loader, works in arduino ide environment. Everything is fine, it came very quickly.

S**h 07.27.2021

Joe is very professional and helpful. We recommend avaq as a business partner.

C**a 01.01.2021

working ok, chip is getting hot when running, no "seek" possibility - play/stop+on/off(long), next+local vol(long), prev + local vol(long), does not seem to have a correct litium battery charging cirquit