Diese Website verwendet Cookies. Durch die Nutzung dieser Website stimmen Sie der Verwendung von Cookies zu. Weitere Informationen finden Sie in unseren Datenschutzrichtlinie.

Die Bilder dienen nur als Referenz,

Siehe Technische Spezifikationen

PSMN075-100MSE +BOM

Power Field-Effect Transistor, 18A I(D), 100V, 0.071ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Hersteller:

NXP
Herstellerteil #:

PSMN075-100MSE
Datenblatt:

PSMN075-100MSE Datenblatt (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
Avalanche Energy Rating (Eas):

25 mJ

PSMN075-100MSE Allgemeine Beschreibung

New standards and proprietary approaches are enabling the next generation of Power-over-Ethernet (PoE) systems capable of delivering up to 100 W to each powered device (PD). Large screen LCD displays, 3G / 4G / Wi-Fi hot-spots and pan-tilt-zoom CCTV cameras, for example, are placing increased demands on the power sourcing equipment (PSE) in terms of “soft-start” procedures, resilience to short-circuits, thermal management and power density. Part of Nexperia’s “NextPower Live” MOSFET portfolio, the PSMN075-100MSE has been designed specifically to compliment the latest PoE controllers, offering both superior linear mode operation and very low R in a cost-effective, industry compatible, LFPAK33 package.

Hauptmerkmale

Enhanced forward biased safe operating area for superior linear mode operation
Low Rdson for low conduction losses
Ultra reliable LFPAK33 package – no glue, no wires, 175°C
Very low IDSS

Anwendung

IEEE802.3at and proprietary solutions - (type 2)
Suitable for PoE applications upto 30W
Use PSMN040-100MSE for higher power requirements

Spezifikationen

Source Content uid	PSMN075-100MSE	Part Life Cycle Code	Active
Reach Compliance Code	not_compliant	ECCN Code	EAR99
Avalanche Energy Rating (Eas)	25 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	100 V
Drain Current-Max (ID)	18 A	Drain-source On Resistance-Max	0.071 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JESD-30 Code	R-PSSO-G4
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	4
Operating Mode	ENHANCEMENT MODE	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Pulsed Drain Current-Max (IDM)	74 A
Reference Standard	IEC-60134	Surface Mount	YES
Terminal Finish	TIN	Terminal Form	GULL WING
Terminal Position	SINGLE	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON

Servicerichtlinien und andere

After-Sales- und Abwicklungsbezogen

Zahlung

Bezahlverfahren

TT/Überweisung

Paypal

Western Union

Geldgramm

Für alternative Zahlungskanäle kontaktieren Sie uns bitte unter:

[email protected]

Versand & Verpackung

Versandart

Fedex

UPS

DHL

NTN

Verpackung

AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..

Garantie

365-Tage-Produkt

Qualitätsgarantie

Wir versprechen, 365 Tage Qualitätssicherung für alle unsere Produkte zu bieten.

Bewertungen und Rezensionen

Mehr

I**c 05.02.2024

Super came quickly, did not check

G**n 04.16.2024

For Order No: 100887958010879 Order Closed: 29 Apr 2019 21:10 Seller: ModuleFans the product is TPA3116 D2 TPA3116DA DC 12V 24V 100W Mono Channel Digital Power Audio Amplifier Board TPA3116D2 Large Capacity Board=10 pcs.-I have received enough product.-The seller side told me the time of delivery from the very beginning to my country. This makes it very easy and confident.-About the goods sent is faster than expected.Thank you very much.

M**n 04.02.2022

The product is very high quality but the time of departure and waiting is very long

J**n 05.09.2020

I am highly impressed with the delivery speed of Avaq. They were incredibly fast and efficient. Great job!