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N-channel MOSFET with a logic level of 21 mΩ and 100 V in LFPAK56 package
LFPAK-56-5Hersteller:
Nexperia USA Inc.
Herstellerteil #:
PSMN021-100YLX
Datenblatt:
Part Life Cycle Code:
Active
Pin Count:
4
Reach Compliance Code:
not_compliant
Additional Feature:
AVALANCHE RATED
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When it comes to high-power N-Channel MOSFETs, the PSMN021-100YLX stands out for its impressive specifications and robust design. With a continuous drain current of 49A and a drain source voltage of 100V, this transistor is well-suited for demanding applications that require high efficiency and reliable performance. The low on-resistance of 0.0168ohm, tested at a gate-source voltage of 10V, ensures minimal power loss and maximum efficiency. The SOT-669 case style with 4 pins makes it easy to integrate this MOSFET into your existing circuit designs, while the maximum operating temperature of 175°C and power dissipation of 147W make it suitable for use in a wide range of industrial and automotive applications. Additionally, the PSMN021-100YLX is compliant with MSL 1 - Unlimited standards and does not contain any SVHC as of January 2018, making it a safe and environmentally friendly choice for your next project
Source Content uid | PSMN021-100YLX | Part Life Cycle Code | Active |
Pin Count | 4 | Reach Compliance Code | not_compliant |
Additional Feature | AVALANCHE RATED | Avalanche Energy Rating (Eas) | 80.8 mJ |
Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 100 V | Drain Current-Max (ID) | 49 A |
Drain-source On Resistance-Max | 0.022 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | MO-235 | JESD-30 Code | R-PSSO-G4 |
JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
Number of Elements | 1 | Number of Terminals | 4 |
Operating Mode | ENHANCEMENT MODE | Peak Reflow Temperature (Cel) | 260 |
Polarity/Channel Type | N-CHANNEL | Pulsed Drain Current-Max (IDM) | 197 A |
Reference Standard | IEC-60134 | Surface Mount | YES |
Terminal Finish | TIN | Terminal Form | GULL WING |
Terminal Position | SINGLE | Time@Peak Reflow Temperature-Max (s) | 30 |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
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