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Siehe Technische Spezifikationen

PSMN4R8-100BSEJ +BOM

Detailed specifications for PSMN4R8-100BSEJ, identified as a MOSFET under the label PSMN4R8-100BSE/SOT404/D2PAK

Hersteller:

Nexperia USA Inc.
Herstellerteil #:

PSMN4R8-100BSEJ
Datenblatt:

PSMN4R8-100BSEJ Datenblatt (PDF)
Part Life Cycle Code:

Active
Pin Count:

3
Reach Compliance Code:

not_compliant
Avalanche Energy Rating (Eas):

542 mJ
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an PSMN4R8-100BSEJ

Email: [email protected]

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Tel: +852 95804164

PSMN4R8-100BSEJ Allgemeine Beschreibung

This D2PAK-packaged MOSFET features a standard level N-channel design, making it an ideal solution for telecommunication systems that rely on a 48V backplane or supply rail. With its low R characteristic and robust construction, the PSMN4R8-100BSEJ is well-equipped to handle even the most demanding applications

Hauptmerkmale

Enhanced forward biased safe operating area for superior linear mode operation
Very low RDS(on) for low conduction losses

Anwendung

Reverse polarity
Thermal shutdown
Short circuit

Spezifikationen

Source Content uid	PSMN4R8-100BSEJ	Part Life Cycle Code	Active
Pin Count	3	Reach Compliance Code	not_compliant
Avalanche Energy Rating (Eas)	542 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	100 V
Drain Current-Max (ID)	120 A	Drain-source On Resistance-Max	0.0048 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	Feedback Cap-Max (Crss)	643 pF
JESD-30 Code	R-PSSO-G2	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	2	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Min	-55 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	405 W
Pulsed Drain Current-Max (IDM)	707 A	Reference Standard	IEC-60134
Surface Mount	YES	Terminal Finish	TIN
Terminal Form	GULL WING	Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON	Turn-off Time-Max (toff)	294 ns
Turn-on Time-Max (ton)	159 ns

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