Bezahlverfahren
SI2319DS-T1-E3 +BOM
P-MOSFET transistor with unipolar operation, -40V voltage rating, and -2.3A current rating
SOT-23-3-
Hersteller:
Vishay
-
Herstellerteil #:
SI2319DS-T1-E3
-
Datenblatt:
-
Technology:
Si
-
Mounting Style:
SMD/SMT
-
Transistor Polarity:
P-Channel
-
Number Of Channels:
1 Channel
-
EDA/CAD Modelle:
Verfügbarkeit: 6168 Stck
Bitte füllen Sie das kurze Formular unten aus und wir werden Ihnen umgehend ein Angebot zukommen lassen..
SI2319DS-T1-E3 Allgemeine Beschreibung
The Vishay SI2319DS-T1-E3 P Channel Mosfet is a versatile component suitable for a wide range of electronic applications. Its P Channel design allows for easy integration into various circuit configurations. The 40V drain source voltage (Vds) rating provides ample headroom for voltage spikes and transient conditions. With a continuous drain current (Id) rating of 3A, this MOSFET can handle moderate power levels without overheating. The surface mount transistor mounting style simplifies assembly processes, making it ideal for automated production lines. The Rds(On) test voltage of 4.5V indicates low on-resistance, resulting in minimal power loss during operation. Despite not being RoHS compliant, the Vishay SI2319DS-T1-E3 remains a reliable choice for electronic design projects
Hauptmerkmale
Spezifikationen
Product Category | MOSFET | Technology | Si |
Mounting Style | SMD/SMT | Transistor Polarity | P-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 40 V |
Id - Continuous Drain Current | 3 A | Rds On - Drain-Source Resistance | 82 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 1 V |
Qg - Gate Charge | 17 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 1.25 W |
Channel Mode | Enhancement | Tradename | TrenchFET |
Series | SI2 | Configuration | Single |
Fall Time | 25 ns | Forward Transconductance - Min | 7 S |
Height | 1.45 mm | Length | 2.9 mm |
Product Type | MOSFET | Rise Time | 15 ns |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Transistor Type | 1 P-Channel | Typical Turn-Off Delay Time | 25 ns |
Typical Turn-On Delay Time | 7 ns | Width | 1.6 mm |
Part # Aliases | SI2319DS-T1-BE3 SI2319DS-E3 | Unit Weight | 0.000282 oz |
Servicerichtlinien und andere
After-Sales- und Abwicklungsbezogen
Für alternative Zahlungskanäle kontaktieren Sie uns bitte unter:
[email protected]Versandart
AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..
365-Tage-Produkt
Qualitätsgarantie
Wir versprechen, 365 Tage Qualitätssicherung für alle unsere Produkte zu bieten.
In Stock: 6.168
Minimum Order: 1
Menge. | Einzelpreis | Ext. Preis |
---|---|---|
1+ | - | - |
Die unten angegebenen Preise dienen nur als Referenz.
Alle Stücklisten (BOM) können per E-Mail gesendet werden an [email protected], oder füllen Sie das untenstehende Formular aus, um ein Angebot für SI2319DS-T1-E3 zu erstellen, garantierte Angebote zurück innerhalb 12 Std.
Top Sellers
-
2N2222
Stmicroelectronics
1000+ $0,587
-
BC547
Onsemi
NPN Epitaxial Silicon Transistor
-
ULN2003
Onsemi
Versatile device for driving heavy loads and motor
-
IRF3205
Infineon
TO-220AB Tube Power Transistor with N-Channel Silicon
-
TAN15
Microchip
The TAN is a robust NPN transistor designed for high-frequency applications, capable of operating at up to V and continuous curren