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P-Channel STripFET II POWER MosFet with 60V voltage rating and 0.2 Ohm resistance
TO-252-3Hersteller:
Herstellerteil #:
STD10PF06T4
Datenblatt:
Technology:
Si
Mounting Style:
SMD/SMT
Transistor Polarity:
P-Channel
Number Of Channels:
1 Channel
EDA/CAD Modelle:
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The STD10PF06T4 Power MOSFET transistor is a versatile and efficient component for managing power in a variety of applications. With a maximum drain-source voltage of 60 volts and a continuous drain current of 9.3 amperes, it offers reliable power handling capabilities for a wide range of requirements. Its low on-resistance of 0.1 ohms ensures minimal power loss and efficient power management, making it an excellent choice for power supplies, motor control, lighting, and DC-DC converters. Housed in a TO-252 package, the transistor is designed for easy installation and removal, adding to its convenience. Moreover, its high input capacitance of 1050 picofarads makes it suitable for high-frequency applications, further expanding its usefulness. The STD10PF06T4 stands out as a dependable option for applications requiring high current and voltage levels, thanks to its reliable performance and robust design
Product Category | MOSFET | Technology | Si |
Mounting Style | SMD/SMT | Transistor Polarity | P-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 60 V |
Id - Continuous Drain Current | 10 A | Rds On - Drain-Source Resistance | 180 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Minimum Operating Temperature | - 65 C |
Maximum Operating Temperature | + 175 C | Pd - Power Dissipation | 40 W |
Channel Mode | Enhancement | Series | STD10PF06 |
Configuration | Single | Fall Time | 10 ns |
Forward Transconductance - Min | 5 S | Height | 2.4 mm |
Length | 6.6 mm | Product Type | MOSFET |
Rise Time | 40 ns | Factory Pack Quantity | 2500 |
Subcategory | MOSFETs | Transistor Type | 1 P-Channel |
Type | MOSFET | Typical Turn-Off Delay Time | 40 ns |
Typical Turn-On Delay Time | 20 ns | Width | 6.2 mm |
Unit Weight | 0.011640 oz |
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