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STD10PF06T4 +BOM

P-Channel STripFET II POWER MosFet with 60V voltage rating and 0.2 Ohm resistance

STD10PF06T4 Allgemeine Beschreibung

The STD10PF06T4 Power MOSFET transistor is a versatile and efficient component for managing power in a variety of applications. With a maximum drain-source voltage of 60 volts and a continuous drain current of 9.3 amperes, it offers reliable power handling capabilities for a wide range of requirements. Its low on-resistance of 0.1 ohms ensures minimal power loss and efficient power management, making it an excellent choice for power supplies, motor control, lighting, and DC-DC converters. Housed in a TO-252 package, the transistor is designed for easy installation and removal, adding to its convenience. Moreover, its high input capacitance of 1050 picofarads makes it suitable for high-frequency applications, further expanding its usefulness. The STD10PF06T4 stands out as a dependable option for applications requiring high current and voltage levels, thanks to its reliable performance and robust design

ST Inventar
ST Originalbestand
ST Inventar

Spezifikationen

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 10 A Rds On - Drain-Source Resistance 180 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Minimum Operating Temperature - 65 C
Maximum Operating Temperature + 175 C Pd - Power Dissipation 40 W
Channel Mode Enhancement Series STD10PF06
Configuration Single Fall Time 10 ns
Forward Transconductance - Min 5 S Height 2.4 mm
Length 6.6 mm Product Type MOSFET
Rise Time 40 ns Factory Pack Quantity 2500
Subcategory MOSFETs Transistor Type 1 P-Channel
Type MOSFET Typical Turn-Off Delay Time 40 ns
Typical Turn-On Delay Time 20 ns Width 6.2 mm
Unit Weight 0.011640 oz

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