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Siehe Technische Spezifikationen

STD5NM60T4 +BOM

N-Channel 600V MOSFET with 0.9 Ohm typical resistance and 5A current capacity in a DPAK package

Hersteller:

Stmicroelectronics
Herstellerteil #:

STD5NM60T4
Datenblatt:

STD5NM60T4 Datenblatt (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel

STD5NM60T4 Allgemeine Beschreibung

The STD5NM60T4 is a N-channel MOSFET transistor designed for high power applications. With a continuous drain current of 5A and a drain source voltage of 650V, this transistor is capable of handling high power loads. The on-resistance (Rds(on)) of 1ohm ensures efficient power conversion, while the threshold voltage of 4V allows for precise control of the transistor. The D-PAK case style and SMD termination type make it suitable for surface mount applications. With a power dissipation of 96W and the ability to handle pulse currents of up to 20A, this transistor is well-suited for demanding environments. Operating within a temperature range of -55°C to +150°C, it can withstand extreme conditions. The compact external dimensions of 2.55mm x 6.8mm x 10.5mm make it suitable for space-constrained designs. With a voltage rating of 600V for Vds and 30V for Vgs, this transistor provides a wide safety margin for voltage spikes and overloads

Hauptmerkmale

High surge immunity
Low inductance
Soft turn-off
Compact package size
Rugged environmental resistance

Anwendung

Audio amplifiers
Automotive ignition
Switching power

Spezifikationen

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	600 V
Id - Continuous Drain Current	5 A	Rds On - Drain-Source Resistance	1 Ohms
Vgs - Gate-Source Voltage	- 30 V, + 30 V	Vgs th - Gate-Source Threshold Voltage	3 V
Qg - Gate Charge	18 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	96 W
Channel Mode	Enhancement	Tradename	MDmesh
Series	STD5NM60	Configuration	Single
Fall Time	10 ns	Forward Transconductance - Min	2.4 S
Height	2.4 mm	Length	6.6 mm
Product Type	MOSFET	Rise Time	10 ns
Factory Pack Quantity	2500	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Type	MOSFET
Typical Turn-Off Delay Time	23 ns	Typical Turn-On Delay Time	14 ns
Width	6.2 mm	Unit Weight	0.011640 oz

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