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Trans MOSFET N-CH 60V 0.27A 3-Pin E-Line
E-LineHersteller:
Herstellerteil #:
VN10LP
Datenblatt:
Pbfree Code:
Yes
Part Life Cycle Code:
Active
Pin Count:
3
Reach Compliance Code:
compliant
All bill of materials (BOM) can be sent via email to
[email protected],
or fill below form to Quote for VN10LP, guaranteed quotes back within
12hr.
Bitte füllen Sie das kurze Formular unten aus und wir werden Ihnen umgehend ein Angebot zukommen lassen..
MOSFET, N E-LINE; Transistor Polarity: N Channel; Continuous Drain Current Id: 270mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 7.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 800mV; Power Dissipation
Pbfree Code | Yes | Part Life Cycle Code | Active |
Pin Count | 3 | Reach Compliance Code | compliant |
ECCN Code | EAR99 | Factory Lead Time | 78 Weeks |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 60 V |
Drain Current-Max (ID) | 0.27 A | Drain-source On Resistance-Max | 5 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | Feedback Cap-Max (Crss) | 5 pF |
JESD-30 Code | O-PBCY-W3 | JESD-609 Code | e3 |
Number of Elements | 1 | Number of Terminals | 3 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 0.625 W | Qualification Status | Not Qualified |
Surface Mount | NO | Terminal Finish | MATTE TIN |
Terminal Form | WIRE | Terminal Position | BOTTOM |
Time@Peak Reflow Temperature-Max (s) | 30 | Transistor Element Material | SILICON |
Product Category | MOSFET | Technology | Si |
Mounting Style | Through Hole | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 60 V |
Id - Continuous Drain Current | 270 mA | Rds On - Drain-Source Resistance | 5 Ohms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 800 mV |
Qg - Gate Charge | - | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 625 mW |
Channel Mode | Enhancement | Series | VN10 |
Forward Transconductance - Min | 100 mS | Height | 4.01 mm |
Length | 4.77 mm | Product | MOSFET Small Signals |
Product Type | MOSFET | Factory Pack Quantity | 4000 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Type | FET | Typical Turn-Off Delay Time | 10 ns |
Typical Turn-On Delay Time | 10 ns | Width | 2.41 mm |
Unit Weight | 0.016000 oz |
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Bezahlverfahren
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AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..
365-Tage-Produkt
Qualitätsgarantie
Wir versprechen, 365 Tage Qualitätssicherung für alle unsere Produkte zu bieten.
Menge. | Einzelpreis | Ext. Preis |
---|---|---|
1000+ | $0,400 | $400,00 |
500+ | $0,415 | $207,50 |
100+ | $0,448 | $44,80 |
30+ | $0,501 | $15,03 |
10+ | $0,555 | $5,55 |
1+ | $0,660 | $0,66 |
Die unten angegebenen Preise dienen nur als Referenz.