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Siehe Technische Spezifikationen

VN10KN3-G +BOM

TO-92 packaged N-type silicon MOSFET, capable of handling up to 60 volts and 0.31 amperes of current

Hersteller:

Microchip Technology, Inc
Herstellerteil #:

VN10KN3-G
Datenblatt:

VN10KN3-G Datenblatt (PDF)
Technology:

Si
Mounting Style:

Through Hole
Number Of Channels:

1 Channel
Transistor Polarity:

N-Channel
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an VN10KN3-G

VN10KN3-G Allgemeine Beschreibung

Engineers can confidently utilize the VN10KN3-G transistor in a wide range of electronic systems, thanks to its robust design and innovative features. Whether used for switching or amplification tasks, this enhancement-mode device delivers consistent results and reliable operation. Its unique combination of attributes makes it a valuable asset in projects where efficiency and performance are paramount

Hauptmerkmale

Fast switching speeds achieved
High reliability and long lifespan
Economical and space-saving design

Microchip Technology, Inc Originalbestand

Spezifikationen

Product Category:	MOSFET	Technology:	Si
Mounting Style:	Through Hole	Number of Channels:	1 Channel
Transistor Polarity:	N-Channel	Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	310 mA	Rds On - Drain-Source Resistance:	5 Ohms
Vgs th - Gate-Source Threshold Voltage:	800 mV	Vgs - Gate-Source Voltage:	10 V
Minimum Operating Temperature:	- 55 C	Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1 W	Configuration:	Single
Channel Mode:	Enhancement	Packaging:	Bulk
Height:	5.33 mm	Length:	5.21 mm
Transistor Type:	1 N-Channel	Type:	FET
Width:	4.19 mm	Forward Transconductance - Min:	100 mmho
Product Type:	MOSFET	Factory Pack Quantity:	1000
Subcategory:	MOSFETs	Unit Weight:	0.007760 oz
Tags	VN10KN3-G, VN10KN3, VN10KN, VN10K, VN10, VN1	Product Category	MOSFET
Technology	Si	Mounting Style	Through Hole
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	60 V	Id - Continuous Drain Current	310 mA
Rds On - Drain-Source Resistance	5 Ohms	Vgs - Gate-Source Voltage	- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage	800 mV	Qg - Gate Charge	-
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	1 W	Channel Mode	Enhancement
Configuration	Single	Forward Transconductance - Min	100 mmho
Height	5.33 mm	Length	5.21 mm
Product Type	MOSFET	Factory Pack Quantity	1000
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Type	FET	Width	4.19 mm
Unit Weight	0.016000 oz

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