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MOSFET, N-Channel Enhancement-Mode, 60V, 5.0 Ohm.
TO-92-3Hersteller:
Herstellerteil #:
VN10KN3-G-P014
Datenblatt:
Technology:
Si
Mounting Style:
Through Hole
Transistor Polarity:
N-Channel
Number Of Channels:
1 Channel
EDA/CAD Modelle:
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The VN10KN3-G-P014 is a versatile enhancement-mode transistor featuring a vertical DMOS structure and a silicon-gate manufacturing process. This design provides the device with the power handling capabilities of bipolar transistors, as well as the high input impedance and positive temperature coefficient characteristic of MOS devices. Additionally, the transistor is free from thermal runaway and thermally-induced secondary breakdown, ensuring reliable and stable performance. With its low threshold voltage, high breakdown voltage, and fast switching speeds, the VN10KN3-G-P014 is well-suited for a wide range of switching and amplifying applications
Product Category | MOSFET | Technology | Si |
Mounting Style | Through Hole | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 60 V |
Id - Continuous Drain Current | 310 mA | Rds On - Drain-Source Resistance | 7.5 Ohms |
Vgs - Gate-Source Voltage | - 30 V, + 30 V | Vgs th - Gate-Source Threshold Voltage | 800 mV |
Qg - Gate Charge | - | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 1 W |
Channel Mode | Enhancement | Configuration | Single |
Height | 5.33 mm | Length | 5.21 mm |
Product | MOSFET Small Signals | Product Type | MOSFET |
Factory Pack Quantity | 2000 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Width | 4.19 mm |
Unit Weight | 0.016000 oz |
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Menge. | Einzelpreis | Ext. Preis |
---|---|---|
1+ | $0,593 | $0,59 |
200+ | $0,231 | $46,20 |
500+ | $0,223 | $111,50 |
1000+ | $0,218 | $218,00 |
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