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ZXTP2014ZTA +BOM

Power Bipolar Transistor

ZXTP2014ZTA Allgemeine Beschreibung

The ZXTP2014ZTA stands out as a high-performance PNP bipolar transistor designed for general-purpose switching and amplification applications. With a maximum power dissipation of 2.625W and a collector current rating of 1A, this transistor excels in high-speed switching and low saturation voltage requirements. Its high current gain (hFE) of up to 200 at a collector current of 500mA ensures exceptional amplification characteristics, while the low on-state saturation voltage of 0.55V at a collector current of 500mA minimizes power losses and improves efficiency in switching applications. Additionally, the device boasts a low thermal resistance of 140°C/W, allowing it to operate at high power levels without overheating. Encased in a reliable SOT-223 package, the ZXTP2014ZTA offers excellent thermal performance and effortless installation on printed circuit boards

Hauptmerkmale

  • BVCEO> -140V
  • IC = -3A High Continuous Current
  • Low Saturation Voltage VCE(sat) <-75mV @ -0.5A
  • Rsat = 85mΩ for a Low Equivalent On-Resistance
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen- and Antimony-Free. “Green” Device (Note 3)
  • For automotive applications requiring specific change
  • control (i.e. parts qualified to AEC-Q100/101/200, PPAP
  • capable, and manufactured in IATF 16949 certified facilities),
  • please contact us or your local Diodes representative.
  • https://www.diodes.com/quality/product-definitions/

Anwendung

SWITCHING

Spezifikationen

Transistor Type PNP Current - Collector (Ic) (Max) 3 A
Voltage - Collector Emitter Breakdown (Max) 140 V Vce Saturation (Max) @ Ib, Ic 330mV @ 300mA, 3A
Current - Collector Cutoff (Max) 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1A, 5V
Power - Max 2.1 W Frequency - Transition 120MHz
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Base Product Number ZXTP2014

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