Diese Website verwendet Cookies. Durch die Nutzung dieser Website stimmen Sie der Verwendung von Cookies zu. Weitere Informationen finden Sie in unseren Datenschutzrichtlinie.

Die Bilder dienen nur als Referenz,

Siehe Technische Spezifikationen

2N7002DWH6327XTSA1 +BOM

Overview: 2N7002DWH6327XTSA1 is a dual N-channel MOSFET with a 60V voltage rating, 3 Ohm resistance, and 0

Hersteller:

Infineon Technologies Corporation
Herstellerteil #:

2N7002DWH6327XTSA1
Datenblatt:

2N7002DWH6327XTSA1 Datenblatt (PDF)
Series:

OptiMOS™
Technology:

MOSFET (Metal Oxide)
Configuration:

2 N-Channel (Dual)
FET Feature:

Logic Level Gate
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an 2N7002DWH6327XTSA1

2N7002DWH6327XTSA1 Allgemeine Beschreibung

Transistor Polarity = N-Channel / Configuration = Dual / Continuous Drain Current (Id) mA = 300 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) Ohm = 3 / Gate-Source Voltage V = 20 / Fall Time ns = 3.1 / Rise Time ns = 3.3 / Turn-OFF Delay Time ns = 5.5 / Turn-ON Delay Time ns = 3 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-363 / Pins = 6 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Power Dissipation (Pd) mW = 500

Infineon Technologies Corporation Inventar

Hauptmerkmale

Epoxy encapsulation
Solder dip friendly
Robust design for reliability

Infineon Technologies Corporation Originalbestand

Anwendung

Solar panel systems
HVAC controls
USB peripherals

Spezifikationen

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsFET, MOSFET Arrays	Series	OptiMOS™
Technology	MOSFET (Metal Oxide)	Configuration	2 N-Channel (Dual)
FET Feature	Logic Level Gate	Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	300mA	Rds On (Max) @ Id, Vgs	3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	0.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	20pF @ 25V	Power - Max	500mW
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	2N7002	RHoS	yes
PBFree	yes	HalogenFree	yes
Product Category	MOSFET	Mounting Style	SMD/SMT
Transistor Polarity	N-Channel	Number of Channels	2 Channel
Vds - Drain-Source Breakdown Voltage	60 V	Id - Continuous Drain Current	300 mA
Rds On - Drain-Source Resistance	1.6 Ohms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	1.5 V	Qg - Gate Charge	600 pC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	500 mW	Channel Mode	Enhancement
Qualification	AEC-Q101	Fall Time	3.1 ns, 3.1 ns
Forward Transconductance - Min	200 mS, 200 mS	Height	0.9 mm
Length	2 mm	Product Type	MOSFET
Rise Time	3.3 ns, 3.3 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	2 N-Channel
Typical Turn-Off Delay Time	5.5 ns, 5.5 ns	Typical Turn-On Delay Time	3 ns, 3 ns
Width	1.25 mm	Part # Aliases	2N7002DW H6327 SP000917596
Unit Weight	0.000265 oz

Servicerichtlinien und andere

After-Sales- und Abwicklungsbezogen

Zahlung

Bezahlverfahren

TT/Überweisung

Paypal

Western Union

Geldgramm

Für alternative Zahlungskanäle kontaktieren Sie uns bitte unter:

[email protected]

Versand & Verpackung

Versandart

Fedex

UPS

DHL

NTN

Verpackung

AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..