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Siehe Technische Spezifikationen

2N7002DWQ-7-F +BOM

2N7002DWQ-7-F is a dual N-channel MOSFET with a 60V voltage rating, capable of handling currents up to 0

Hersteller:

Diodes Incorporated
Herstellerteil #:

2N7002DWQ-7-F
Datenblatt:

2N7002DWQ-7-F Datenblatt (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99

2N7002DWQ-7-F Allgemeine Beschreibung

Product 2N7002DWQ-7-F is a MOSFET transistor designed for automotive applications, meeting the AEC-Q101 qualification standard. This dual N-channel transistor has a maximum continuous drain current of 230mA and a drain-source voltage rating of 60V, making it suitable for a variety of low-power switching applications. With an on-resistance of 4.4ohm and a threshold voltage of 2V, this MOSFET provides efficient performance in a compact SOT-363 package

Hauptmerkmale

Dual N-Channel MOSFET

Low On-Resistance

Low Gate Threshold Voltage

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

Ultra-Small Surface Mount Package

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. Green Device (Notes 3 & 4)

Qualified to AEC-Q101 Standards for High Reliability

Anwendung

Motor Control

Power Management Functions

Spezifikationen

Pbfree Code	Yes	Part Life Cycle Code	Active
Reach Compliance Code	compliant	ECCN Code	EAR99
Factory Lead Time	104 Weeks	Additional Feature	HIGH RELIABILITY
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	60 V
Drain Current-Max (ID)	0.23 A	Drain-source On Resistance-Max	7.5 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	Feedback Cap-Max (Crss)	5 pF
JESD-30 Code	R-PDSO-G6	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	2
Number of Terminals	6	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	0.4 W
Reference Standard	AEC-Q101	Surface Mount	YES
Terminal Finish	MATTE TIN	Terminal Form	GULL WING
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON

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AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..