Bezahlverfahren
BSC014N04LS +BOM
Product BSC014N04LS is a MOSFET N-channel with a voltage rating of 40V and a current rating of 100A
TDSON-8-
Hersteller:
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Herstellerteil #:
BSC014N04LS
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Datenblatt:
-
Pbfree Code:
No
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Part Life Cycle Code:
Active
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Pin Count:
8
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Reach Compliance Code:
not_compliant
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EDA/CAD Modelle:
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Verfügbarkeit: 4387 Stck
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BSC014N04LS Allgemeine Beschreibung
The BSC014N04LS power MOSFET from Infioneon Technologies is a powerhouse component designed for medium power applications. With a drain-source voltage of 40V and a continuous drain current of 100A, this MOSFET is versatile and capable of handling a wide range of power management tasks. Its low on-resistance of 1.5 mΩ ensures minimal power loss and maximum efficiency in circuit operation. Housed in a sturdy TO-263-7 package, the BSC014N04LS offers both thermal and mechanical stability for reliable performance in any environment. Additionally, this MOSFET is built to withstand high temperatures, with a maximum junction temperature of 175°C
Spezifikationen
Source Content uid | BSC014N04LS | Pbfree Code | No |
Part Life Cycle Code | Active | Pin Count | 8 |
Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
Avalanche Energy Rating (Eas) | 170 mJ | Case Connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 40 V |
Drain Current-Max (ID) | 170 A | Drain-source On Resistance-Max | 0.0019 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | Feedback Cap-Max (Crss) | 200 pF |
JESD-30 Code | R-PDSO-F8 | JESD-609 Code | e3 |
Moisture Sensitivity Level | 1 | Number of Elements | 1 |
Number of Terminals | 8 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 °C | Operating Temperature-Min | -55 °C |
Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 96 W |
Pulsed Drain Current-Max (IDM) | 792 A | Reference Standard | IEC-61249-2-21 |
Surface Mount | YES | Terminal Finish | TIN |
Terminal Form | FLAT | Terminal Position | DUAL |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Series | OptiMOS™ | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 40 V |
Current - Continuous Drain (Id) @ 25°C | 32A (Ta), 100A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 1.4mOhm @ 50A, 10V | Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 61 nC @ 10 V | Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 4300 pF @ 20 V | Power Dissipation (Max) | 2.5W (Ta), 96W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
Base Product Number | BSC014 |
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In Stock: 4.387
Minimum Order: 1
Menge. | Einzelpreis | Ext. Preis |
---|---|---|
1+ | $1,289 | $1,29 |
10+ | $1,099 | $10,99 |
30+ | $0,993 | $29,79 |
100+ | $0,875 | $87,50 |
500+ | $0,700 | $350,00 |
1000+ | $0,676 | $676,00 |
Die unten angegebenen Preise dienen nur als Referenz.