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BSC047N08NS3G +BOM

Transistor MOSFET N-channel with 80V voltage rating

BSC047N08NS3G Allgemeine Beschreibung

The BSC047N08NS3 G is a N-channel power MOSFET manufactured by Infineon Technologies. It is designed for use in a wide range of applications, including DC-DC converters, motor control, and power supplies. This MOSFET features a maximum continuous drain current of 47A and a maximum drain-source voltage of 80V. It has a low on-state resistance of 8mΩ, which helps to reduce power losses and improve efficiency in high-current applications. The BSC047N08NS3 G also has a gate threshold voltage of 2.5V and a gate charge of 58nC, making it easy to drive with standard digital logic circuits. It has a low input capacitance of 2850pF and a fast switching speed, which allows for efficient operation at high frequencies.This MOSFET is housed in a TO-263 package, which provides excellent thermal performance and reliable operation in demanding environments. It is also RoHS compliant, making it suitable for use in environmentally sensitive applications.

Hauptmerkmale

  • This is a powerful MOSFET transistor.
  • Designed for high efficiency power switching
  • Suitable for rugged and harsh environments
  • Rugged Silicon Carbide structure ensures reliability
  • This device features low on-resistance and gate charge
  • Maximum drain-source voltage is 80V

Anwendung

  • Reliable motor control solution
  • Efficient in industrial automation
  • Great for power efficiency

Spezifikationen

IDpuls max 400.0 A Ptot max 125.0 W
VDS max 80.0 V Polarity N
RDS (on) max 4.7 mΩ ID max 100.0 A
VGS(th) max 3.5 V VGS(th) min 2.0 V
Operating Temperature max 150.0 °C Operating Temperature min -55.0 °C

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