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Siehe Technische Spezifikationen

BSS84W-7-F +BOM

Polarity: P-channel

Hersteller:

Diodes Incorporated
Herstellerteil #:

BSS84W-7-F
Datenblatt:

BSS84W-7-F Datenblatt (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
Number Of Channels:

1 Channel
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an BSS84W-7-F

BSS84W-7-F Allgemeine Beschreibung

The BSS84W-7-F stands as a notable offering in the realm of field-effect transistors, providing engineers and designers with a reliable solution for high-speed switching applications. From audio amplifiers to power management circuits, this FET demonstrates its versatility and efficiency in handling complex tasks with ease. Its impressive specs, including a maximum drain-source voltage of 50V and a low on-resistance of 8 ohms, highlight its capability to deliver consistent performance even under challenging conditions. With a gate threshold voltage of 1.3V and a compact SOT-323 package, the BSS84W-7-F is tailor-made for modern electronics applications where space and efficiency are paramount

Hauptmerkmale

High Frequency Performance
Pulse Width Modulation Supported
Silicon Gate Technology Used
Ruggedized ESD Protection
Low Input Capacitance
Fast Switching Time

Anwendung

Portable electronic devices
Mobile phones
Tablets
Laptops
LED lighting
Low voltage applications
Battery management systems
Automotive electronics
Industrial automation
RF power amplifiers

Spezifikationen

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	P-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	50 V
Id - Continuous Drain Current	130 mA	Rds On - Drain-Source Resistance	10 Ohms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	800 mV
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	200 mW	Channel Mode	Enhancement
Series	BSS84	Configuration	Single
Forward Transconductance - Min	0.05 S	Height	1 mm
Length	2.2 mm	Product	MOSFET Small Signals
Product Type	MOSFET	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 P-Channel
Type	Enhancement Mode Field Effect Transistor	Typical Turn-Off Delay Time	18 ns
Typical Turn-On Delay Time	10 ns	Width	1.35 mm
Unit Weight	0.000212 oz

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