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C3M0045065K +BOM

650V N-Channel SiC Transistor with 49A Current Rating in TO-247 Package

C3M0045065K Allgemeine Beschreibung

Meet your high-performance power management needs with C3M0045065K, a Silicon Carbide Power MOSFET produced by Wolfspeed, a Cree Company. The C3M0065100K model features a drain-source voltage rating of 650V and a continuous drain current of 31A, making it a reliable choice for high-frequency power electronic applications. Its low on-resistance, fast switching speeds, and low switching losses make it suitable for a wide range of applications including motor drives, power supplies, and inverters. The MOSFET's compact and efficient design minimizes space requirements and maximizes power density, while its TO-247-4 package ensures long-term durability. Operating at a maximum temperature of 150°C and featuring a built-in temperature sensor for monitoring and protection purposes, this device offers reliability and performance for your power management needs

Spezifikationen

Product Category MOSFET Technology SiC
Mounting Style Through Hole Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 650 V
Id - Continuous Drain Current 49 A Rds On - Drain-Source Resistance 45 mOhms
Vgs - Gate-Source Voltage - 8 V, + 19 V Vgs th - Gate-Source Threshold Voltage 3.6 V
Qg - Gate Charge 63 nC Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 175 C Pd - Power Dissipation 176 W
Channel Mode Enhancement Configuration Single
Fall Time 6 ns Product Type MOSFET
Rise Time 12 ns Factory Pack Quantity 30
Subcategory MOSFETs Typical Turn-Off Delay Time 20 ns
Typical Turn-On Delay Time 9 ns Unit Weight 0.211644 oz

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B**O 01.24.2022

He himself hesitated thought different will (

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T**g 02.26.2021

GREAT PEOPLE ,GOOD SERVICE

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M**n 01.11.2021

Corresponds to the description, in st. petersburg arrived at 55 days was not tracked.

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C**b 07.13.2020

Everything came on time. Everything works. Thank you very much.

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