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FCH041N60F +BOM

Comes in a rail configuration for convenience

FCH041N60F Allgemeine Beschreibung

With the SuperFET II FRFET® MOSFET, you can trust that your power applications will benefit from the latest advancements in MOSFET technology. Its ability to deliver low on-resistance, reduced gate charge, and optimized reverse recovery performance make it a standout choice for engineers seeking high-performance solutions for their power designs. Trust the FCH041N60F SuperFET II MOSFET to meet and exceed your expectations for performance, efficiency, and reliability

FCH041N60F

Hauptmerkmale

  • Ultra-low power consumption
  • Fast response time guaranteed
  • High-frequency switching capability
  • Low electromagnetic interference
  • Rugged and reliable design ensured
  • Efficient thermal dissipation achieved

Anwendung

  • Robust Workstation Power Supply
  • Smart Power Grid Technologies
  • Data Processing Power Solutions

Spezifikationen

Product Category MOSFET Technology Si
Mounting Style Through Hole Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 600 V
Id - Continuous Drain Current 76 A Rds On - Drain-Source Resistance 36 mOhms
Vgs - Gate-Source Voltage - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage 5 V
Qg - Gate Charge 277 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 595 W
Channel Mode Enhancement Tradename SuperFET II FRFET
Series FCH041N60F Configuration Single
Fall Time 53 ns Forward Transconductance - Min 64.5 S
Height 20.82 mm Length 15.87 mm
Product Type MOSFET Rise Time 66 ns
Factory Pack Quantity 30 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 244 ns
Typical Turn-On Delay Time 63 ns Width 4.82 mm
Unit Weight 0.211644 oz

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