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Siehe Technische Spezifikationen

FCH104N60F +BOM

Power MOSFET, N-Channel, SUPERFET® II, FRFET®, 600 V, 37 A, 104 mΩ, TO-247

Hersteller:

ON
Herstellerteil #:

FCH104N60F
Datenblatt:

FCH104N60F Datenblatt (PDF)
REACH:

Details
Technology:

Si
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an FCH104N60F

FCH104N60F Allgemeine Beschreibung

The SuperFET II MOSFET, model FCH104N60F, sets a new standard in high voltage SJ MOSFET technology. By utilizing charge balance technology, this device offers exceptional performance in terms of low on-resistance and reduced gate charge. This unique technology allows for minimal conduction loss, enhanced switching capabilities, improved dv/dt rate, and increased avalanche energy. With these features, the SuperFET II MOSFET is perfectly suited for various switching power applications including PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. Additionally, the SuperFET II FRFET MOSFET boasts optimized body diode reverse recovery performance, eliminating the need for additional components and thereby enhancing system reliability

Hauptmerkmale

High Power Density
Low Voltage Drop
Fast Rise Time Capability
Self-Protected for Safety

Anwendung

Quality product for all
Efficient and reliable
Dependable in all situations

Spezifikationen

Product Category	MOSFET	REACH	Details
Technology	Si	Mounting Style	Through Hole
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	650 V	Id - Continuous Drain Current	37 A
Rds On - Drain-Source Resistance	104 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	5 V	Qg - Gate Charge	139 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	357 W	Channel Mode	Enhancement
Tradename	SuperFET II FRFET	Series	FCH104N60F
Configuration	Single	Fall Time	20 ns
Forward Transconductance - Min	47 S	Height	20.82 mm
Length	15.87 mm	Product Type	MOSFET
Rise Time	58 ns	Factory Pack Quantity	30
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	206 ns	Typical Turn-On Delay Time	78 ns
Width	4.82 mm	Unit Weight	0.211644 oz

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