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Siehe Technische Spezifikationen

FDC5612 +BOM

N-Channel PowerTrench® MOSFET 60V 4.3A, 55mΩ

Hersteller:

onsemi
Herstellerteil #:

FDC5612
Datenblatt:

FDC5612 Datenblatt (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an FDC5612

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

FDC5612 Allgemeine Beschreibung

The FDC5612 N-Channel MOSFET offers unparalleled efficiency and performance for DC/DC converter applications. Its innovative design features faster switching speeds and lower gate charge, making it easier and safer to drive even at very high frequencies. These characteristics result in higher overall efficiency for power supply designs, ultimately leading to energy savings and improved system reliability. By incorporating the FDC5612 MOSFET into their designs, engineers can achieve superior performance and efficiency in their DC/DC converter circuits, making it an ideal choice for a wide range of applications

Hauptmerkmale

3.2 A, 90 V, R_DS(ON) = 0.04 Ω @ V_GS = 13 V
Ultra-low gate charge (9nC typical)
Fast switching speed with zero voltage crossover
High performance trench technology for extremely low R_DS(ON)

Anwendung

Automotive application
Consumer electronics interface
Industrial automation sensor

Spezifikationen

Source Content uid	FDC5612	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	compliant
ECCN Code	EAR99	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	60 V	Drain Current-Max (ID)	4.3 A
Drain-source On Resistance-Max	0.055 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 Code	R-PDSO-G6	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	6	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	1.6 W
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	MATTE TIN	Terminal Form	GULL WING
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON

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Verpackung

AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..