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FDC6321C +BOM

Dual N & P Channel Digital FET 25V

Hersteller:

ON
Herstellerteil #:

FDC6321C
Datenblatt:

FDC6321C Datenblatt (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel, P-Channel
Number Of Channels:

2 Channel
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an FDC6321C

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

FDC6321C Allgemeine Beschreibung

Elevate your electronic projects with the innovative FDC6321C dual N & P Channel logic level enhancement mode field effect transistor. Engineered using a cutting-edge high cell density DMOS technology, this transistor boasts minimal on-state resistance for unrivaled performance in low voltage applications. Specifically designed to replace digital transistors in load switching applications, the FDC6321C eliminates the need for bias resistors, simplifying circuit design and enhancing overall efficiency. By consolidating multiple digital transistors with different bias resistors into a single dual digital FET, this transistor offers a versatile and cost-effective solution for a wide range of electronic applications. Trust the FDC6321C to deliver reliable, high-performance results for your next project

Hauptmerkmale

High voltage, low current.
Fast switching, low noise.
High-speed, high-power.
Low-voltage, high-current.
Ultra-fast, ultra-low power.
High-reliability, long lifetime.

Anwendung

Great for all your needs.
Perfect for any situation.
Works well in various settings.

Spezifikationen

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel, P-Channel
Number of Channels	2 Channel	Vds - Drain-Source Breakdown Voltage	25 V
Id - Continuous Drain Current	680 mA, 460 mA	Rds On - Drain-Source Resistance	450 mOhms
Vgs - Gate-Source Voltage	- 8 V, + 8 V	Vgs th - Gate-Source Threshold Voltage	650 mV, 1.5 V
Qg - Gate Charge	2.3 nC, 1.5 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	900 mW
Channel Mode	Enhancement	Series	FDC6321C
Configuration	Dual	Fall Time	8 ns, 9 ns
Forward Transconductance - Min	1.45 S, 0.8 S	Height	1.1 mm
Length	2.9 mm	Product	MOSFET Small Signals
Product Type	MOSFET	Rise Time	8 ns, 9 ns
Factory Pack Quantity	3000	Subcategory	MOSFETs
Transistor Type	1 N-Channel, 1 P-Channel	Type	FET
Typical Turn-Off Delay Time	17 ns, 55 ns	Typical Turn-On Delay Time	3 ns, 7 ns
Width	1.6 mm	Part # Aliases	FDC6321C_NL
Unit Weight	0.001270 oz

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Verpackung

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