Diese Website verwendet Cookies. Durch die Nutzung dieser Website stimmen Sie der Verwendung von Cookies zu. Weitere Informationen finden Sie in unseren Datenschutzrichtlinie.

Die Bilder dienen nur als Referenz,

Siehe Technische Spezifikationen

FDC658P +BOM

Single P-Channel Logic Level PowerTrench® MOSFET -30V, -4A, 50mΩ

Hersteller:

onsemi
Herstellerteil #:

FDC658P
Datenblatt:

FDC658P Datenblatt (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an FDC658P

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

FDC658P Allgemeine Beschreibung

By incorporating cutting-edge technology and a specially tailored manufacturing process, the FDC658P sets a new standard for P-Channel MOSFETs. Its PowerTrench® design minimizes resistance while maintaining low gate charge, resulting in improved switching capabilities and overall performance. Suited for intricate tasks like battery charging and DC/DC conversion, the FDC658P offers a reliable solution for power management in various electronic devices

Hauptmerkmale

High-reliability design.
Low power consumption.
Fast turn-on time.
Superior surge withstand capability.
High isolation voltage rating.
Small thermal coefficient of resistance.

Anwendung

Designed for maximum performance.
Effortlessly stylish and functional.
An essential for your daily routine.

Spezifikationen

Source Content uid	FDC658P	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	compliant
ECCN Code	EAR99	Factory Lead Time	40 Weeks
Additional Feature	LOGIC LEVEL COMPATIBLE	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	30 V	Drain Current-Max (ID)	4 A
Drain-source On Resistance-Max	0.05 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 Code	R-PDSO-G6	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	6	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Operating Temperature-Min	-55 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	P-CHANNEL
Power Dissipation-Max (Abs)	1.6 W	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	MATTE TIN
Terminal Form	GULL WING	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON

Servicerichtlinien und andere

After-Sales- und Abwicklungsbezogen

Zahlung

Bezahlverfahren

TT/Überweisung

Paypal

Western Union

Geldgramm

Für alternative Zahlungskanäle kontaktieren Sie uns bitte unter:

[email protected]

Versand & Verpackung

Versandart

Fedex

UPS

DHL

NTN

Verpackung

AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..