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Siehe Technische Spezifikationen

FDMC7660 +BOM

N-Channel PowerTrench® MOSFET 30V, 20A, 2.2mΩ

Hersteller:

onsemi
Herstellerteil #:

FDMC7660
Datenblatt:

FDMC7660 Datenblatt (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an FDMC7660

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

FDMC7660 Allgemeine Beschreibung

Fairchild Semiconductor's FDMC7660 is a superior N-channel MOSFET that boasts exceptional performance and reliability, thanks to the company's advanced PowerTrench® process. This process is specifically engineered to minimize on-state resistance, making the FDMC7660 an excellent choice for Power Management and load switching applications commonly found in Notebook Computers and Portable Battery Packs. With its robust design and high efficiency, the FDMC7660 is well-equipped to handle the power demands of modern electronic devices, ensuring smooth and uninterrupted operation

Hauptmerkmale

Ultra-low noise operation for sensitive applications
High reliability ensures long-term performance and durability
Wide input voltage range up to 36V
Excellent thermal performance ensures stable operation

Anwendung

Multi-purpose product
Adaptable to different needs
Suitable for diverse tasks

Spezifikationen

Source Content uid	FDMC7660	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	77 Weeks
Avalanche Energy Rating (Eas)	200 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	30 V
Drain Current-Max (ID)	20 A	Drain-source On Resistance-Max	0.0022 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	MO-240BA
JESD-30 Code	S-PDSO-N5	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	5	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	41 W
Pulsed Drain Current-Max (IDM)	200 A	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	Matte Tin (Sn) - annealed
Terminal Form	NO LEAD	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON

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Verpackung

AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..