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Dual P-Channel MOSFET with -30V rating in SO-8 package
SOIC-8Hersteller:
Onsemi
Herstellerteil #:
FDS4953
Datenblatt:
Technology:
Si
Mounting Style:
SMD/SMT
Transistor Polarity:
P-Channel
Number Of Channels:
2 Channel
EDA/CAD Modelle:
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The FDS4953 P-channel MOSFET transistor is a versatile component that offers high-speed switching capabilities for a wide range of electronic circuits. With a drain-source voltage rating of 30V and a continuous drain current of 1.1A, it is well-suited for low to medium power applications. Its low on-resistance of 340mΩ at a gate voltage of -4.5V ensures efficient power handling, while the gate threshold voltage of -1.6V to -3.5V provides reliable turn-on and turn-off characteristics. The transistor's small package size and low capacitance contribute to its high-speed performance, making it ideal for applications requiring fast switching speeds. Design engineers can take advantage of its high efficiency and excellent thermal performance in power management circuits, battery protection circuits, and load switching applications
Product Category | MOSFET | Technology | Si |
Mounting Style | SMD/SMT | Transistor Polarity | P-Channel |
Number of Channels | 2 Channel | Vds - Drain-Source Breakdown Voltage | 30 V |
Id - Continuous Drain Current | 5 A | Rds On - Drain-Source Resistance | 55 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 175 C | Pd - Power Dissipation | 2 W |
Channel Mode | Enhancement | Series | FDS4953 |
Configuration | Dual | Fall Time | 9 ns |
Forward Transconductance - Min | 10 S | Height | 1.75 mm |
Length | 4.9 mm | Product Type | MOSFET |
Rise Time | 13 ns | Factory Pack Quantity | 2500 |
Subcategory | MOSFETs | Transistor Type | 2 P-Channel |
Type | MOSFET | Typical Turn-Off Delay Time | 14 ns |
Typical Turn-On Delay Time | 7 ns | Width | 3.9 mm |
Part # Aliases | FDS4953_NL | Unit Weight | 0.006596 oz |
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