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Siehe Technische Spezifikationen

FDS6982AS +BOM

Mosfet Array 30V 6.3A, 8.6A 900mW Surface Mount 8-SOIC

Hersteller:

onsemi
Herstellerteil #:

FDS6982AS
Datenblatt:

FDS6982AS Datenblatt (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Obsolete
Reach Compliance Code:

compliant
ECCN Code:

EAR99
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an FDS6982AS

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

FDS6982AS Allgemeine Beschreibung

The FDS6982AS is a versatile solution for synchronous DC:DC power supplies in modern electronic devices. Its unique design allows it to replace two single SO-8 MOSFETs and a Schottky diode, making it an efficient and space-saving choice for notebook computers and other battery-powered gadgets. With two 30V, N-channel, logic level, PowerTrench® MOSFETs, the FDS6982AS is optimized for maximum power conversion efficiency. The high-side switch (Q1) is engineered to minimize switching losses, while the low-side switch (Q2) is focused on reducing conduction losses. Additionally, Q2 features an integrated Schottky diode using Fairchild’s innovative SyncFET technology, further optimizing its performance

Hauptmerkmale

Low on-resistance MOSFETs minimize energy losses
Rugged and reliable construction for harsh environments
Fully programmable logic controller (PLC) for advanced control

Self-diagnostic capabilities detect and alert issues
Real-time data logging and reporting
Automatic shutdown and restart function

Anwendung

Great for everyday use
Lightweight and compact
Perfect for on-the-go

Spezifikationen

Source Content uid	FDS6982AS	Pbfree Code	Yes
Part Life Cycle Code	Obsolete	Reach Compliance Code	compliant
ECCN Code	EAR99	HTS Code	8541.29.00.95
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	30 V
Drain Current-Max (ID)	8.6 A	Drain-source On Resistance-Max	0.0135 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JESD-30 Code	R-PDSO-G8
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	2	Number of Terminals	8
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Operating Temperature-Min	-55 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Power Dissipation Ambient-Max	2 W
Pulsed Drain Current-Max (IDM)	30 A	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	MATTE TIN
Terminal Form	GULL WING	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON	Turn-off Time-Max (toff)	64 ns
Turn-on Time-Max (ton)	34 ns

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AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..

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Bewertungen und Rezensionen

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L**y 06.07.2024

Deep sleep 15ma from 6 ma usb from 3.3

B**o 04.29.2021

I was impressed by Avaq's lightning-fast delivery of the MW7IC915NT1 components. They arrived in perfect condition, reflecting their dedication to customer satisfaction. Top-notch service and quality!

P**l 09.26.2020

A good store, the seller is sociable, the goods received in karaganda 14 days after payment. It looks good, i'll test it off. I use the services of the seller for the second time, there are no comments, i recommend.

M**n 06.01.2020

Everything came on time, thank you!