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FDV303N +BOM

25V 680mA 450mΩ@4.5V,500mA 350mW 1.5V@250uA N Channel SOT-23 MOSFETs ROHS

Hersteller:

Onsemi
Herstellerteil #:

FDV303N
Datenblatt:

FDV303N Datenblatt (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an FDV303N

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

FDV303N Allgemeine Beschreibung

Designed using proprietary technology, the FDV303N N-Channel enhancement mode field effect transistor is engineered for superior performance. Its high cell density DMOS technology minimizes on-state resistance at low gate drive conditions, making it well-suited for use in battery circuits with lithium, cadmium, or NMH cells. Whether used in inverters or high-efficiency miniature discrete DC/DC conversion in portable electronic devices, the FDV303N delivers exceptional results. Even at gate drive voltages as low as 2.5 volts, this device maintains excellent on-state resistance, making it a reliable choice for power management applications

Hauptmerkmale

25 V, 0.68 A continuous, 2 A Peak
R_DS(ON)= 0.45 Ω @ V_GS= 4.5 V
R_DS(ON)= 0.6 Ω @ V_GS= 2.7 V
Very low level gate drive requirements allowing direct operation in 3V circuits. V_GS(th) < 1.0V
Gate-Source Zener for ESD ruggedness. >6kV Human Body Model
Compact industry standard SOT-23 surface mount package
Alternative to TN0200T and TN0201T

Anwendung

This product is general usage and suitable for many different applications.

Spezifikationen

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	25 V
Id - Continuous Drain Current	680 mA	Rds On - Drain-Source Resistance	450 mOhms
Vgs - Gate-Source Voltage	- 8 V, + 8 V	Vgs th - Gate-Source Threshold Voltage	650 mV
Qg - Gate Charge	2.3 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	350 mW
Channel Mode	Enhancement	Series	FDV303N
Configuration	Single	Fall Time	8.5 ns
Forward Transconductance - Min	1.45 S	Height	1.2 mm
Length	2.9 mm	Product	MOSFET Small Signals
Product Type	MOSFET	Rise Time	8.5 ns
Factory Pack Quantity	3000	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Type	MOSFET
Typical Turn-Off Delay Time	17 ns	Typical Turn-On Delay Time	3 ns
Width	1.3 mm	Part # Aliases	FDV303N_NL
Unit Weight	0.000282 oz

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AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..