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Siehe Technische Spezifikationen

FQA11N90C +BOM

C-Series 900V N-Channel MOSFET

Hersteller:

Onsemi
Herstellerteil #:

FQA11N90C
Datenblatt:

FQA11N90C Datenblatt (PDF)
Technology:

Si
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an FQA11N90C

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

FQA11N90C Allgemeine Beschreibung

Designed for high-power applications that require efficient switching and low on-state resistance, the FQA11N90C power MOSFET transistor offers exceptional performance. With a breakdown voltage of 900V and a continuous drain current rating of 11A, it is well-suited for power supply, motor control, and lighting applications where high efficiency is paramount. The transistor's low on-state resistance of 0.65Ω minimizes power dissipation, while its gate charge of 59nC and gate-source threshold voltage of 4V enable fast and reliable switching performance. Housed in a TO-3P package, the FQA11N90C provides superior thermal performance and effortless PCB mounting

Hauptmerkmale

Silicon-based power semiconductor device performance
Efficient power conversion solution operation
Fast switching speed and high efficiency
Rugged and reliable electronic component design
Compact and lightweight packaging technology

Anwendung

Power supplies
Motors
Lighting

Spezifikationen

Product Category	MOSFET	Technology	Si
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	900 V
Id - Continuous Drain Current	11 A	Rds On - Drain-Source Resistance	1.4 Ohms
Vgs - Gate-Source Voltage	- 30 V, + 30 V	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	300 W
Channel Mode	Enhancement	Configuration	Single
Fall Time	85 ns	Forward Transconductance - Min	9 S
Height	20.1 mm	Length	16.2 mm
Product Type	MOSFET	Rise Time	130 ns
Factory Pack Quantity	30	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Type	MOSFET
Typical Turn-Off Delay Time	130 ns	Typical Turn-On Delay Time	60 ns
Width	5 mm	Part # Aliases	FQA11N90C_NL
Unit Weight	0.162260 oz

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Verpackung

AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..