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Siehe Technische Spezifikationen

FQA19N60 +BOM

Power MOSFET, N-Channel, QFET®, 600 V, 18.5 A, 380 mΩ, TO-3P

Hersteller:

Fairchild Semiconductor
Herstellerteil #:

FQA19N60
Datenblatt:

FQA19N60 Datenblatt (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Obsolete
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an FQA19N60

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

FQA19N60 Allgemeine Beschreibung

The FQA19N60 is a cutting-edge N-Channel power MOSFET that stands out due to its advanced features and superior performance. Its innovative design incorporates a proprietary planar stripe and DMOS technology, resulting in enhanced on-state resistance reduction and exceptional switching capabilities. Additionally, the device boasts high avalanche energy strength, making it a reliable choice for demanding applications

Hauptmerkmale

18.5A, 600V
R_DS(on)= 380mΩ(Max.) @V_GS = 10 V, I_D = 9.3A
Low gate charge ( Typ. 70nC)
Low C_rss ( Typ. 35pF)
100% avalanche tested

Anwendung

Desktop PC
AC-DC Merchant Power Supply - Desktop PC
Switched Mode Power Supplies
Active Power Factor Correction (PFC)
Electronic Lamp Ballasts

Spezifikationen

Source Content uid	FQA19N60	Pbfree Code	Yes
Part Life Cycle Code	Obsolete	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	4 Weeks
Avalanche Energy Rating (Eas)	1150 mJ	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	600 V	Drain Current-Max (ID)	18.5 A
Drain-source On Resistance-Max	0.38 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 Code	R-PSFM-T3	JESD-609 Code	e3
Number of Elements	1	Number of Terminals	3
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	300 W
Pulsed Drain Current-Max (IDM)	74 A	Qualification Status	Not Qualified
Surface Mount	NO	Terminal Finish	MATTE TIN
Terminal Form	THROUGH-HOLE	Terminal Position	SINGLE
Transistor Application	SWITCHING	Transistor Element Material	SILICON
Product Category	MOSFET	REACH	Details
Technology	Si	Mounting Style	Through Hole
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	600 V	Id - Continuous Drain Current	18.5 A
Rds On - Drain-Source Resistance	380 mOhms	Vgs - Gate-Source Voltage	- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage	5 V	Qg - Gate Charge	70 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	300 W	Channel Mode	Enhancement
Tradename	QFET	Series	FQA19N60
Fall Time	135 ns	Forward Transconductance - Min	16 S
Height	20.1 mm	Length	16.2 mm
Product Type	MOSFET	Rise Time	210 ns
Factory Pack Quantity	450	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Type	MOSFET
Typical Turn-Off Delay Time	150 ns	Typical Turn-On Delay Time	65 ns
Width	5 mm	Part # Aliases	FQA19N60_NL
Unit Weight	0.162260 oz

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Verpackung

AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..