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Siehe Technische Spezifikationen

FQA90N15 +BOM

50V 90A Power MOSFET N-Channel 18mΩ

Hersteller:

Onsemi
Herstellerteil #:

FQA90N15
Datenblatt:

FQA90N15 Datenblatt (PDF)
REACH:

Details
Technology:

Si
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an FQA90N15

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

FQA90N15 Allgemeine Beschreibung

The FQA90N15, a power MOSFET from Fairchild Semiconductor (now ON Semiconductor), stands out for its suitability in high-voltage, high-speed switching applications, commonly encountered in power supplies, motor control, and other power management systems. With a voltage rating of 150 volts and a continuous drain current of 90 amperes, it is well-suited for managing significant power levels. Its low on-state resistance (RDS(on)) of approximately 0.033 ohms plays a crucial role in minimizing power dissipation and improving efficiency in high-current applications. Housed in a TO-3P package, this MOSFET guarantees good thermal performance and convenient mounting. Furthermore, advanced silicon technology and design features ensure its reliable operation under various conditions, including overvoltage, overcurrent, and thermal stress. Additionally, the FQA90N15 may incorporate protective features such as overtemperature shutdown and overcurrent protection, further enhancing its robustness in demanding environments

Hauptmerkmale

High-speed switching
Safe operating area
100% tested for quality
Low input current draw
Compact surface-mount design
Epoxy encapsulation for reliability

Anwendung

Powerful Workstations
High Performance Servers

Spezifikationen

Product Category	MOSFET	REACH	Details
Technology	Si	Mounting Style	Through Hole
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	150 V	Id - Continuous Drain Current	90 A
Rds On - Drain-Source Resistance	18 mOhms	Vgs - Gate-Source Voltage	- 25 V, + 25 V
Vgs th - Gate-Source Threshold Voltage	2 V	Qg - Gate Charge	285 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 175 C
Pd - Power Dissipation	375 W	Channel Mode	Enhancement
Tradename	QFET	Series	FQA90N15
Configuration	Single	Fall Time	410 ns
Forward Transconductance - Min	68 S	Height	20.1 mm
Length	16.2 mm	Product Type	MOSFET
Rise Time	760 ns	Factory Pack Quantity	450
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Type	MOSFET	Typical Turn-Off Delay Time	470 ns
Typical Turn-On Delay Time	105 ns	Width	5 mm
Part # Aliases	FQA90N15_NL	Unit Weight	0.162260 oz

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