Bezahlverfahren
FQP19N20C +BOM
Power MOSFET, N-Channel, QFET®, 200 V, 19 A, 170 mΩ, TO-220
TO-220-3-
Hersteller:
-
Herstellerteil #:
FQP19N20C
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Datenblatt:
-
Pbfree Code:
Yes
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Part Life Cycle Code:
End Of Life
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Reach Compliance Code:
not_compliant
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ECCN Code:
EAR99
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EDA/CAD Modelle:
Verfügbarkeit: 4454 Stck
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FQP19N20C Allgemeine Beschreibung
The FQP19N20C is a high-quality N-Channel enhancement mode power MOSFET that stands out for its exceptional performance and robust design. Thanks to ON Semiconductor's proprietary planar stripe and DMOS technology, this MOSFET delivers superior switching performance and high avalanche energy strength, making it an excellent choice for a wide range of power electronics applications
Hauptmerkmale
- Compact module size
- High power density
- Minimal thermal run-up
- Improved power factor
- Silicon carbide substrate
- Voltage regulation circuitry
Anwendung
- Professional audio features
- Easy to install
- Dimmable lights
Spezifikationen
Source Content uid | FQP19N20C | Pbfree Code | Yes |
Part Life Cycle Code | End Of Life | Reach Compliance Code | not_compliant |
ECCN Code | EAR99 | HTS Code | 8541.29.00.95 |
Factory Lead Time | 77 Weeks, 4 Days | Avalanche Energy Rating (Eas) | 433 mJ |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 200 V |
Drain Current-Max (ID) | 19 A | Drain-source On Resistance-Max | 0.17 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | TO-220AB |
JESD-30 Code | R-PSFM-T3 | JESD-609 Code | e3 |
Number of Elements | 1 | Number of Terminals | 3 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 139 W |
Pulsed Drain Current-Max (IDM) | 76 A | Qualification Status | Not Qualified |
Surface Mount | NO | Terminal Finish | MATTE TIN |
Terminal Form | THROUGH-HOLE | Terminal Position | SINGLE |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Product Category | MOSFET | REACH | Details |
Technology | Si | Mounting Style | Through Hole |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 200 V | Id - Continuous Drain Current | 19 A |
Rds On - Drain-Source Resistance | 170 mOhms | Vgs - Gate-Source Voltage | - 30 V, + 30 V |
Vgs th - Gate-Source Threshold Voltage | 2 V | Qg - Gate Charge | 53 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 139 W | Channel Mode | Enhancement |
Tradename | QFET | Series | FQP19N20C |
Fall Time | 115 ns | Forward Transconductance - Min | 10.8 S |
Height | 16.3 mm | Length | 10.67 mm |
Product Type | MOSFET | Rise Time | 150 ns |
Factory Pack Quantity | 1000 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Type | MOSFET |
Typical Turn-Off Delay Time | 135 ns | Typical Turn-On Delay Time | 15 ns |
Width | 4.7 mm | Part # Aliases | FQP19N20C_NL |
Unit Weight | 0.068784 oz |
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In Stock: 4.454
Minimum Order: 1
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