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Siehe Technische Spezifikationen

KSP42TA +BOM

TO-92 transistor featuring NPN bipolar technology, optimized for small signal circuits, capable of handling currents up to 0

Hersteller:

Fairchild Semiconductor
Herstellerteil #:

KSP42TA
Datenblatt:

KSP42TA Datenblatt (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an KSP42TA

KSP42TA Allgemeine Beschreibung

The KSP42TA is a high-performance NPN bipolar transistor with a maximum collector-emitter voltage rating of 300V. Its transition frequency of 50MHz makes it suitable for use in applications that require fast switching speeds. With a power dissipation rating of 625mW, this transistor can handle moderate power levels with ease. The DC collector current rating of 500mA ensures reliable performance in a wide range of circuit configurations. The DC current gain of 25hFE further enhances its amplification capabilities. The TO-226AA case style with 3 pins allows for easy installation and integration into existing circuit layouts. Operating at temperatures of up to 150°C, this transistor is well-suited for applications that require reliable performance in harsh environments

Hauptmerkmale

Operating Temperature Range : -55°C~150°C
Storage Temperature Range : -65°C~200°C
Emitter Base Voltage V_EB = 6V
Maximum Input Current I_I = 30mA
Package Type : TO-92 Metal Can
HFE (Current Gain) = 200 @ I_C = 10mA, V_CE = 2V

Anwendung

A versatile solution for all.
Suitable for a range of tasks.
Meets diverse application needs.

Spezifikationen

Source Content uid	KSP42TA	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	compliant
ECCN Code	EAR99	Factory Lead Time	20 Weeks
Collector Current-Max (IC)	0.5 A	Collector-Emitter Voltage-Max	300 V
Configuration	SINGLE	DC Current Gain-Min (hFE)	40
JEDEC-95 Code	TO-92	JESD-30 Code	O-PBCY-T3
JESD-609 Code	e3	Number of Elements	1
Number of Terminals	3	Operating Temperature-Max	150 °C
Polarity/Channel Type	NPN	Power Dissipation-Max (Abs)	0.625 W
Qualification Status	Not Qualified	Surface Mount	NO
Terminal Finish	MATTE TIN	Terminal Form	THROUGH-HOLE
Terminal Position	BOTTOM	Transistor Application	AMPLIFIER
Transistor Element Material	SILICON	Transition Frequency-Nom (fT)	50 MHz

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