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Single N-Channel Logic Level Power MOSFET 60V, 18A, 65mΩ, DPAK (SINGLE GAUGE) TO-252, 2500-REEL
TO-252-3Hersteller:
onsemi
Herstellerteil #:
NTD18N06LT4G
Datenblatt:
Pbfree Code:
Yes
Part Life Cycle Code:
Active
Pin Count:
3
Reach Compliance Code:
not_compliant
EDA/CAD Modelle:
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Source Content uid | NTD18N06LT4G | Pbfree Code | Yes |
Part Life Cycle Code | Active | Pin Count | 3 |
Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
HTS Code | 8541.29.00.95 | Factory Lead Time | 66 Weeks |
Additional Feature | LOGIC LEVEL COMPATIBLE | Avalanche Energy Rating (Eas) | 72 mJ |
Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 60 V | Drain Current-Max (ID) | 18 A |
Drain-source On Resistance-Max | 0.065 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
Feedback Cap-Max (Crss) | 80 pF | JESD-30 Code | R-PSSO-G2 |
JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
Number of Elements | 1 | Number of Terminals | 2 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 175 °C |
Operating Temperature-Min | -55 °C | Peak Reflow Temperature (Cel) | 260 |
Polarity/Channel Type | N-CHANNEL | Power Dissipation Ambient-Max | 55 W |
Power Dissipation-Max (Abs) | 55 W | Pulsed Drain Current-Max (IDM) | 54 A |
Qualification Status | Not Qualified | Surface Mount | YES |
Terminal Finish | Matte Tin (Sn) - annealed | Terminal Form | GULL WING |
Terminal Position | SINGLE | Time@Peak Reflow Temperature-Max (s) | 40 |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Turn-off Time-Max (toff) | 120 ns | Turn-on Time-Max (ton) | 180 ns |
Product Category | MOSFET | Technology | Si |
Mounting Style | SMD/SMT | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 60 V |
Id - Continuous Drain Current | 18 A | Rds On - Drain-Source Resistance | 65 mOhms |
Vgs - Gate-Source Voltage | - 5 V, + 5 V | Vgs th - Gate-Source Threshold Voltage | 1 V |
Qg - Gate Charge | 11 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 175 C | Pd - Power Dissipation | 55 W |
Channel Mode | Enhancement | Series | NTD18N06L |
Fall Time | 38 ns | Forward Transconductance - Min | 13.5 S |
Height | 2.38 mm | Length | 6.73 mm |
Product Type | MOSFET | Rise Time | 79 ns |
Factory Pack Quantity | 2500 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Type | MOSFET |
Typical Turn-Off Delay Time | 19 ns | Typical Turn-On Delay Time | 9.9 ns |
Width | 6.22 mm | Unit Weight | 0.011640 oz |
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