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Siehe Technische Spezifikationen

NTD20N06T4G +BOM

Channel MOSFET rated for 60V and 20A

Hersteller:

onsemi
Herstellerteil #:

NTD20N06T4G
Datenblatt:

NTD20N06T4G Datenblatt (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Pin Count:

3
Reach Compliance Code:

not_compliant
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an NTD20N06T4G

NTD20N06T4G Allgemeine Beschreibung

N-Channel 60 V 20A (Ta) 1.88W (Ta), 60W (Tj) Surface Mount DPAK

Hauptmerkmale

Largest Storage Capacity
Faster Read and Write Times
Low Power Sleep Mode
Tightest Sector Alignment
Smoother Error Correction
Better Wear Leveling

Anwendung

AC/DC Power Converter
Variable Frequency Drive
Current Bridge Circuit

Spezifikationen

Source Content uid	NTD20N06T4G	Pbfree Code	Yes
Part Life Cycle Code	Active	Pin Count	3
Reach Compliance Code	not_compliant	ECCN Code	EAR99
HTS Code	8541.29.00.95	Factory Lead Time	52 Weeks, 1 Day
Avalanche Energy Rating (Eas)	170 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	60 V
Drain Current-Max (ID)	20 A	Drain-source On Resistance-Max	0.046 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	Feedback Cap-Max (Crss)	120 pF
JESD-30 Code	R-PSSO-G2	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	2	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	175 °C	Operating Temperature-Min	-55 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	N-CHANNEL
Power Dissipation Ambient-Max	60 W	Power Dissipation-Max (Abs)	60 W
Pulsed Drain Current-Max (IDM)	60 A	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	Matte Tin (Sn) - annealed
Terminal Form	GULL WING	Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	40	Transistor Application	SWITCHING
Transistor Element Material	SILICON	Turn-off Time-Max (toff)	140 ns
Turn-on Time-Max (ton)	140 ns	Product Category	MOSFET
REACH	Details	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	20 A	Rds On - Drain-Source Resistance	37.5 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	2 V
Qg - Gate Charge	30 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Pd - Power Dissipation	60 W
Channel Mode	Enhancement	Series	NTD20N06
Fall Time	37.1 ns	Forward Transconductance - Min	13.2 S
Height	2.38 mm	Length	6.73 mm
Product Type	MOSFET	Rise Time	60.5 ns
Factory Pack Quantity	2500	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Type	MOSFET
Typical Turn-Off Delay Time	27.1 ns	Typical Turn-On Delay Time	9.5 ns
Width	6.22 mm	Unit Weight	0.011640 oz

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