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Siehe Technische Spezifikationen

NTD3055L104-1G +BOM

NTD Series N-Channel 60 V 104 mOhm 48 W Tab Mount Power MOSFET - TO-252-3

Hersteller:

onsemi
Herstellerteil #:

NTD3055L104-1G
Datenblatt:

NTD3055L104-1G Datenblatt (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Obsolete
Pin Count:

4
Reach Compliance Code:

not_compliant
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an NTD3055L104-1G

NTD3055L104-1G Allgemeine Beschreibung

Product NTD3055L104-1G is a high-performance MOSFET transistor with N-channel polarity, designed for a wide range of applications that require efficient power management. With a continuous drain current of 12A and a drain source voltage of 60V, this MOSFET is capable of handling high power loads with ease. Its low on resistance of 0.089ohm ensures minimal power loss and efficient operation. The threshold voltage of 1.6V and test voltage of 5V make it easy to drive, while its TO-251-3 package allows for easy mounting and heat dissipation. This makes it an ideal choice for power supplies, motor control, and other high-power applications that demand reliability and performance

Hauptmerkmale

Enhanced Isolation Performance
Improved Shock Resistance
Faster Diode Recovery Current
Reduced Electromagnetic Interference
Larger Inrush Current Rating
Tighter Ripple Noise Specification

Anwendung

Battery Chargers
Solar Inverters
Motor Drivers

Spezifikationen

Source Content uid	NTD3055L104-1G	Pbfree Code	Yes
Part Life Cycle Code	Obsolete	Pin Count	4
Reach Compliance Code	not_compliant	ECCN Code	EAR99
HTS Code	8541.29.00.95	Avalanche Energy Rating (Eas)	61 mJ
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	60 V	Drain Current-Max (ID)	12 A
Drain-source On Resistance-Max	0.104 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 Code	R-PSIP-T3	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	3	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	175 °C	Peak Reflow Temperature (Cel)	NOT SPECIFIED
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	48 W
Pulsed Drain Current-Max (IDM)	45 A	Qualification Status	Not Qualified
Surface Mount	NO	Terminal Finish	Matte Tin (Sn) - annealed
Terminal Form	THROUGH-HOLE	Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED	Transistor Application	SWITCHING
Transistor Element Material	SILICON

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Zahlung

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[email protected]

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Verpackung

AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..